Product Datasheet Search Results:
16 Pages, 429 KB, Scan- 1N5811US+JAN
- Defense Electronics Supply Center
- 6A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5811US+JANS
- Defense Electronics Supply Center
- 6A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5811US+JANTX
- Defense Electronics Supply Center
- 6A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5811US+JANTXV
- Defense Electronics Supply Center
- 6A Iout, 150V Vrrm Fast Recovery Rectifier
2 Pages, 92 KB, Original- 1N5811US
- Eic Semiconductor, Inc.
- Super Fast Rectifier Diodes
2 Pages, 83 KB, Original- 1N5811US
- Eic Semiconductor
- Rectifier Diode Switching 150V 6A 30ns 2-Pin SMB
5 Pages, 262 KB, Original- 1N5811US
- Microchip Technology
- Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
5 Pages, 262 KB, Original- GRP-A-DATA-1N5811USJANTXV-
- Microchip Technology
- Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
Product Details Search Results:
Dla.mil/1N5811US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...
1152 Bytes - 10:19:23, 18 October 2024
Dla.mil/1N5811US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...
1159 Bytes - 10:19:23, 18 October 2024
Dla.mil/1N5811US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","...
1165 Bytes - 10:19:23, 18 October 2024
Dla.mil/1N5811US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n",...
1170 Bytes - 10:19:23, 18 October 2024
Eic_semiconductor/1N5811US
{"Peak Rep Rev Volt":"150(V)","Product Depth (mm)":"3.6(mm)","Peak Non-Repetitive Surge Current":"125(A)","Rev Curr":"5(uA)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Forward Voltage":"0.875(V)","Product Length (mm)":"4.8(mm)","Rectifier Type":"Switching Diode","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"SMB","Maximum Forward Current":"6000(mA)","Operating T...
1705 Bytes - 10:19:23, 18 October 2024
Microchip.com/1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Peak Rep Rev Volt":"150(V)","Maximum Forward Current":"6000(mA)","Package Type":"E-MELF","Configuration":"Single","Pin Count":"2"}...
1445 Bytes - 10:19:23, 18 October 2024
Microchip.com/GRP-A-DATA-1N5811USJANTXV-
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Configuration":"Single","Pin Count":"2","Package Type":"E-MELF"}...
1522 Bytes - 10:19:23, 18 October 2024
Microchip.com/GRP-DATA-JANTXV1N5811US
925 Bytes - 10:19:23, 18 October 2024
Microchip.com/JANS1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Rep Rev Volt":"150(V)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Waffle","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"E-MELF","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1471 Bytes - 10:19:23, 18 October 2024
Microchip.com/JANTX1N5811US
867 Bytes - 10:19:23, 18 October 2024
Microchip.com/JANTXV1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"E-MELF"}...
1469 Bytes - 10:19:23, 18 October 2024
Microsemi.com/1N5811US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Mounting Type":"Surface Mount","Product Photos":"1N6643US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Family":"Diodes, Rectifiers - Single","Operating Temperature - Ju...
1810 Bytes - 10:19:23, 18 October 2024
