Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Number of Terminals":"2","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"LONG FORM","Reverse Recovery Time-Max":"0.0300 us","Number of Elements":"1"}...

{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JAN1N5811","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANS1N5811","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTX1N5811","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTXV1N5811","@I(R) (A) (Test Condition)":"1.0"}...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n",...

{"Peak Rep Rev Volt":"150(V)","Product Depth (mm)":"3.6(mm)","Peak Non-Repetitive Surge Current":"125(A)","Rev Curr":"5(uA)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Forward Voltage":"0.875(V)","Product Length (mm)":"4.8(mm)","Rectifier Type":"Switching Diode","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"SMB","Maximum Forward Current":"6000(mA)","Operating T...

{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"Case E"}...