Product Datasheet Search Results:

1N5802+JAN.pdf16 Pages, 429 KB, Scan
1N5802+JAN
Defense Electronics Supply Center
2.5A Iout, 50V Vrrm Fast Recovery Rectifier
1N5802+JANS.pdf16 Pages, 429 KB, Scan
1N5802+JANS
Defense Electronics Supply Center
2.5A Iout, 50V Vrrm Fast Recovery Rectifier

Product Details Search Results:

Dla.mil/1N5802+JAN
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JAN1N5802","@I(R) (A) (Test Condition)":"500m"}...
1029 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802+JANS
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANS1N5802","@I(R) (A) (Test Condition)":"500m"}...
1035 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802+JANTX
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTX1N5802","@I(R) (A) (Test Condition)":"500m"}...
1041 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802+JANTXV
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTXV1N5802","@I(R) (A) (Test Condition)":"500m"}...
1047 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@Tem...
1151 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@Te...
1157 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@T...
1162 Bytes - 08:50:40, 20 October 2024
Dla.mil/1N5802US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@...
1169 Bytes - 08:50:40, 20 October 2024
Microchip.com/1N5802
1044 Bytes - 08:50:40, 20 October 2024
Microchip.com/JAN1N5802US
{"Peak Rep Rev Volt":"50(V)","Peak Non-Repetitive Surge Current":"35(A)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"A-MELF","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Peak Reverse Current":"1(uA)","Configuration":"Single","Pin Count":"2"}...
1484 Bytes - 08:50:40, 20 October 2024
Microchip.com/JANS1N5802URS
868 Bytes - 08:50:40, 20 October 2024
Microchip.com/JANTXV1N5802
{"Peak Reverse Current":"1(uA)","Peak Non-Repetitive Surge Current":"35(A)","Peak Rep Rev Volt":"50(V)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Through Hole","Rad Hardened":"No","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"Case A","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Configuration":"Single","Pin Count":"2"}...
1482 Bytes - 08:50:40, 20 October 2024

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