Product Datasheet Search Results:
- 1N5687B
- Aeroflex / Metelics
- 22 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5687BCO
- Aeroflex / Metelics
- 22 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
- 1N5687B
- Api Electronics Group
- VHF-UHF BAND, 22 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5687B
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
- 1N5687B
- Knox Semiconductor, Inc.
- 40V Vrrm, 22pF Capacitance Varactor Diode
- 1N5687B
- Msi Electronics, Inc.
- 40V Vrrm, 22pF Capacitance Varactor Diode
- 1N5687B
- International Semiconductor, Inc.
- 40V Vrrm, 22pF Capacitance Varactor Diode
Product Details Search Results:
Aeroflex.com/1N5687B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"45 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":...
1351 Bytes - 10:10:29, 13 November 2024
Aeroflex.com/1N5687BCO
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"45 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.3","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"500","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Packa...
1250 Bytes - 10:10:29, 13 November 2024
Apitech.com/1N5687B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"45 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"5...
1391 Bytes - 10:10:29, 13 November 2024
Various/1N5687B
{"C1/C2 Min. Capacitance Ratio":"3.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"40","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 10:10:29, 13 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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1STQ005687B0000.pdf | 0.07 | 1 | Request |