Product Datasheet Search Results:
- 1N5553US
- Defense Supply Center Columbus
- SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
- 1N5553US+JAN
- Defense Electronics Supply Center
- 3.0A Iout, 800V Vrrm Fast Recovery Rectifier
- 1N5553US+JANS
- Defense Electronics Supply Center
- 3.0A Iout, 800V Vrrm Fast Recovery Rectifier
- 1N5553US+JANTX
- Defense Electronics Supply Center
- 3.0A Iout, 800V Vrrm Fast Recovery Rectifier
- 1N5553US+JANTXV
- Defense Electronics Supply Center
- 3.0A Iout, 800V Vrrm Fast Recovery Rectifier
- 1N5553US
- Microchip Technology
- Rectifier Diode Switching 800V 5A 2000ns 2-Pin B-MELF Bag
- JANTX1N5553US
- Microchip Technology
- Rectifier Diode Switching 800V 5A 2000ns 2-Pin B-MELF Bag
- 1N5553US
- Microsemi Corp.
- 5 A, 800 V, SILICON, RECTIFIER DIODE
Product Details Search Results:
Dla.mil/1N5553US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 08:25:47, 23 January 2025
Dla.mil/1N5553US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 08:25:47, 23 January 2025
Dla.mil/1N5553US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1052 Bytes - 08:25:47, 23 January 2025
Dla.mil/1N5553US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1060 Bytes - 08:25:47, 23 January 2025
Microchip.com/1N5553US
{"Peak Rep Rev Volt":"800(V)","Peak Non-Repetitive Surge Current":"100(A)","Peak Reverse Recovery Time":"2000(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"1.3(V)","Maximum Forward Current":"5000(mA)","Peak Reverse Current":"1(uA)","Configuration":"Single","Pin Count":"2","Package Type":"B-MELF"}...
1474 Bytes - 08:25:47, 23 January 2025
Microchip.com/JANTX1N5553US
1084 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"1\u00b5A @ 800V","Mounting Type":"Surface Mount","Product Photos":"1N6643US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"-","Voltage - Forward (Vf) (Max) @ If":"1.2V @ 9A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"2\u00b5s","Datasheets":"1N5550US thru 1N5554US","Family":"Diodes, Rectifiers - Single","Operating Temperature - Junction":...
1812 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553USE3
{"Status":"ACTIVE","Diode Type":"RECTIFIER DIODE"}...
700 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553USJAN
{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"100 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"5 A","Mounting":"Surface Mount","Peak Reverse Current":"1 uA","Peak Reverse Recovery Time":"2000 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"1.3@9A V","Peak Reverse Repetitive Voltage":"800 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...
1324 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553USJANTX
{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"100 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"5 A","Mounting":"Surface Mount","Peak Reverse Current":"1 uA","Peak Reverse Recovery Time":"2000 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"1.3@9A V","Peak Reverse Repetitive Voltage":"800 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...
1343 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553US+JANTXV
{"Peak Rep Rev Volt":"800","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"Yes","Forward Voltage":"1.3","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Rev Recov Time":"2000","Package Type":"E-MELF","Peak Non-Repetitive Surge Current (Max)":"100","Rev Curr":"1","Configuration":"Single","Pin Count":"2"}...
1465 Bytes - 08:25:47, 23 January 2025
Microsemi.com/1N5553USJANTXV
{"Peak Rep Rev Volt":"800(V)","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"2000(ns)","Mounting":"Surface Mount","Forward Current":"5000(mA)","Peak Reverse Current":"1(uA)","Rad Hardened":"No","Forward Voltage":"1.3(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"2000(ns)","Package Type":"B-MELF","Maximum Forward Current":"5000(mA)","Re...
1628 Bytes - 08:25:47, 23 January 2025
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