Product Datasheet Search Results:

1N5551US+JAN.pdf21 Pages, 553 KB, Scan
1N5551US+JAN
Defense Electronics Supply Center
3.0A Iout, 400V Vrrm Fast Recovery Rectifier
1N5551US+JANS.pdf21 Pages, 553 KB, Scan
1N5551US+JANS
Defense Electronics Supply Center
3.0A Iout, 400V Vrrm Fast Recovery Rectifier
1N5551US+JANTX.pdf21 Pages, 553 KB, Scan
1N5551US+JANTX
Defense Electronics Supply Center
3.0A Iout, 400V Vrrm Fast Recovery Rectifier
1N5551US+JANTXV.pdf21 Pages, 553 KB, Scan
1N5551US+JANTXV
Defense Electronics Supply Center
3.0A Iout, 400V Vrrm Fast Recovery Rectifier

Product Details Search Results:

Dla.mil/1N5551US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 16:36:54, 29 November 2024
Dla.mil/1N5551US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 16:36:54, 29 November 2024
Dla.mil/1N5551US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1054 Bytes - 16:36:54, 29 November 2024
Dla.mil/1N5551US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1059 Bytes - 16:36:54, 29 November 2024

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