Product Datasheet Search Results:

1N5550.pdf2 Pages, 292 KB, Original
1N5550
Central Semiconductor Corp.
3 A, 200 V, SILICON, RECTIFIER DIODE
1N5550BK.pdf1 Pages, 24 KB, Scan
1N5550BK
Central Semiconductor Corp.
3 A, 200 V, SILICON, RECTIFIER DIODE
1N5550LEADFREE.pdf2 Pages, 292 KB, Original
1N5550LEADFREE
Central Semiconductor Corp.
3 A, 200 V, SILICON, RECTIFIER DIODE
1N5550TR.pdf1 Pages, 24 KB, Scan
1N5550TR
Central Semiconductor Corp.
3 A, 200 V, SILICON, RECTIFIER DIODE
1N5550TRLEADFREE.pdf1 Pages, 24 KB, Scan
1N5550TRLEADFREE
Central Semiconductor Corp.
3 A, 200 V, SILICON, RECTIFIER DIODE

Product Details Search Results:

Centralsemi.com/1N5550
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"200 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1214 Bytes - 04:11:45, 16 December 2024
Centralsemi.com/1N5550BK
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"200 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1224 Bytes - 04:11:45, 16 December 2024
Centralsemi.com/1N5550LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"200 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","...
1313 Bytes - 04:11:45, 16 December 2024
Centralsemi.com/1N5550TR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"200 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1222 Bytes - 04:11:45, 16 December 2024
Centralsemi.com/1N5550TRLEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"200 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","...
1321 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SOD-61H2","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5550","@I(R) (A) (Test Condition)":"1.0"}...
1030 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SOD-61H2","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5550","@I(R) (A) (Test Condition)":"1.0"}...
1036 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SOD-61H2","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5550","@I(R) (A) (Test Condition)":"1.0"}...
1041 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SOD-61H2","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5550","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5550US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5550US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 04:11:45, 16 December 2024
Dla.mil/1N5550US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5550US","@I(R) (A) (Test Condition)":"1.0"}...
1054 Bytes - 04:11:45, 16 December 2024

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