Product Datasheet Search Results:

1N5474B.pdf1 Pages, 34 KB, Original
1N5474B
Aeroflex / Metelics
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5474BCO.pdf1 Pages, 45 KB, Scan
1N5474BCO
Aeroflex / Metelics
68 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5474B06.pdf2 Pages, 99 KB, Scan
1N5474B06
Alpha Industries, Inc.
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B12.pdf2 Pages, 99 KB, Scan
1N5474B12
Alpha Industries, Inc.
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B18.pdf2 Pages, 99 KB, Scan
1N5474B18
Alpha Industries, Inc.
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B.pdf1 Pages, 59 KB, Scan
1N5474B
Api Electronics Group
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5474B.pdf2 Pages, 88 KB, Scan
1N5474B
Codi Semiconductor, Inc.
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B.pdf1 Pages, 55 KB, Original
1N5474B
Crystalonics
68 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
1N5474B+JAN.pdf18 Pages, 505 KB, Scan
1N5474B+JAN
Defense Electronics Supply Center
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B+JANTX.pdf18 Pages, 505 KB, Scan
1N5474B+JANTX
Defense Electronics Supply Center
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B+JANTXV.pdf18 Pages, 505 KB, Scan
1N5474B+JANTXV
Defense Electronics Supply Center
30V Vrrm, 68pF Capacitance Varactor Diode
1N5474B.pdf3 Pages, 138 KB, Scan
1N5474B
Loral
30V Vrrm, 68pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/1N5474B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position":...
1350 Bytes - 08:38:35, 25 December 2024
Aeroflex.com/1N5474BCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"250","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1227 Bytes - 08:38:35, 25 December 2024
Alphaind.com/1N5474B06
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 08:38:35, 25 December 2024
Alphaind.com/1N5474B12
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 08:38:35, 25 December 2024
Alphaind.com/1N5474B18
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 08:38:35, 25 December 2024
Apitech.com/1N5474B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"2...
1382 Bytes - 08:38:35, 25 December 2024
Crystalonics.com/1N5474B
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configu...
1249 Bytes - 08:38:35, 25 December 2024
Dla.mil/1N5474B+JAN
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"Y","Mil Number":"JAN1N5474B","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
857 Bytes - 08:38:35, 25 December 2024
Dla.mil/1N5474B+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"Y","Mil Number":"JANTX1N5474B","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
869 Bytes - 08:38:35, 25 December 2024
Dla.mil/1N5474B+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"Y","Mil Number":"JANTXV1N5474B","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
875 Bytes - 08:38:35, 25 December 2024
Microsemi.com/1N5474B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"250","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1265 Bytes - 08:38:35, 25 December 2024
Various/1N5474B
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 08:38:35, 25 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
1STQ005474B0000.pdf0.071Request