Product Datasheet Search Results:

1N5473C.pdf1 Pages, 34 KB, Original
1N5473C
Aeroflex / Metelics
56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5473CCO.pdf1 Pages, 45 KB, Scan
1N5473CCO
Aeroflex / Metelics
56 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5473CO.pdf1 Pages, 45 KB, Scan
1N5473CO
Aeroflex / Metelics
56 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5473C06.pdf2 Pages, 99 KB, Scan
1N5473C06
Alpha Industries, Inc.
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C12.pdf2 Pages, 99 KB, Scan
1N5473C12
Alpha Industries, Inc.
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C18.pdf2 Pages, 99 KB, Scan
1N5473C18
Alpha Industries, Inc.
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C.pdf1 Pages, 59 KB, Scan
1N5473C
Api Electronics Group
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5473C.pdf2 Pages, 88 KB, Scan
1N5473C
Codi Semiconductor, Inc.
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C+JAN.pdf18 Pages, 505 KB, Scan
1N5473C+JAN
Defense Electronics Supply Center
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C+JANTX.pdf18 Pages, 505 KB, Scan
1N5473C+JANTX
Defense Electronics Supply Center
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C+JANTXV.pdf18 Pages, 505 KB, Scan
1N5473C+JANTXV
Defense Electronics Supply Center
30V Vrrm, 56pF Capacitance Varactor Diode
1N5473C.pdf3 Pages, 138 KB, Scan
1N5473C
Loral
30V Vrrm, 56pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/1N5473C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"56 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":...
1349 Bytes - 12:58:44, 25 December 2024
Aeroflex.com/1N5473CCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"56 pF","Diode Cap Tolerance":"2 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1225 Bytes - 12:58:44, 25 December 2024
Aeroflex.com/1N5473CO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"56 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1215 Bytes - 12:58:44, 25 December 2024
Alphaind.com/1N5473C06
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 12:58:44, 25 December 2024
Alphaind.com/1N5473C12
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 12:58:44, 25 December 2024
Alphaind.com/1N5473C18
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 12:58:44, 25 December 2024
Apitech.com/1N5473C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"56 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1384 Bytes - 12:58:44, 25 December 2024
Dla.mil/1N5473C+JAN
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"Y","Mil Number":"JAN1N5473C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
857 Bytes - 12:58:44, 25 December 2024
Dla.mil/1N5473C+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"Y","Mil Number":"JANTX1N5473C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
869 Bytes - 12:58:44, 25 December 2024
Dla.mil/1N5473C+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"Y","Mil Number":"JANTXV1N5473C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
874 Bytes - 12:58:44, 25 December 2024
Microsemi.com/1N5473C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"56 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"2 %","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1272 Bytes - 12:58:44, 25 December 2024
Various/1N5473C
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"56p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 12:58:44, 25 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
ERJ1GNJ473C.pdf0.661Request
ERJ1GJJ473C.pdf0.661Request
ERJ1GNF1473C.pdf0.711Request
ERJU01F1473C.pdf0.481Request
ERJU01J473C.pdf0.481Request
ERJ1RHD1473C.pdf0.711Request
ERJ1GJF1473C.pdf0.711Request
EA_473CF2F5.pdf0.211Request
YOKOGAWA_80473C94.pdf0.201Request
MEFA_80473C7B.pdf1.631Request
1STQ002473C0000.pdf0.071Request
4TBV853473C0100.pdf0.281Request