Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5470C
- Aeroflex / Metelics
- 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- 1N5470CCO
- Aeroflex / Metelics
- 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1 Pages, 45 KB, Scan- 1N5470CO
- Aeroflex / Metelics
- 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
2 Pages, 99 KB, Scan- 1N5470C06
- Alpha Industries, Inc.
- 30V Vrrm, 33pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5470C12
- Alpha Industries, Inc.
- 30V Vrrm, 33pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5470C18
- Alpha Industries, Inc.
- 30V Vrrm, 33pF Capacitance Varactor Diode
1 Pages, 59 KB, Scan- 1N5470C
- Api Electronics Group
- VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
2 Pages, 88 KB, Scan- 1N5470C
- Codi Semiconductor, Inc.
- 30V Vrrm, 33pF Capacitance Varactor Diode
18 Pages, 505 KB, Scan- 1N5470C+JAN
- Defense Electronics Supply Center
- 30V Vrrm, 33pF Capacitance Varactor Diode
18 Pages, 505 KB, Scan- 1N5470C+JANTX
- Defense Electronics Supply Center
- 30V Vrrm, 33pF Capacitance Varactor Diode
18 Pages, 505 KB, Scan- 1N5470C+JANTXV
- Defense Electronics Supply Center
- 30V Vrrm, 33pF Capacitance Varactor Diode
Product Details Search Results:
Aeroflex.com/1N5470C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"33 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":...
1349 Bytes - 16:53:26, 23 December 2024
Aeroflex.com/1N5470CCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"33 pF","Diode Cap Tolerance":"2 %","Quality Factor-Min":"500","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1225 Bytes - 16:53:26, 23 December 2024
Aeroflex.com/1N5470CO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"33 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"500","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1220 Bytes - 16:53:26, 23 December 2024
Alphaind.com/1N5470C06
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 16:53:26, 23 December 2024
Alphaind.com/1N5470C12
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 16:53:26, 23 December 2024
Alphaind.com/1N5470C18
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 16:53:26, 23 December 2024
Apitech.com/1N5470C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"33 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"5...
1382 Bytes - 16:53:26, 23 December 2024
Dla.mil/1N5470C+JAN
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"Y","Mil Number":"JAN1N5470C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
856 Bytes - 16:53:26, 23 December 2024
Dla.mil/1N5470C+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"Y","Mil Number":"JANTX1N5470C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
869 Bytes - 16:53:26, 23 December 2024
Dla.mil/1N5470C+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"Y","Mil Number":"JANTXV1N5470C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
875 Bytes - 16:53:26, 23 December 2024
Microsemi.com/1N5470C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"33 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"2 %","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1270 Bytes - 16:53:26, 23 December 2024
Various/1N5470C
{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 16:53:26, 23 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| B88069X5470C253.pdf | 0.14 | 1 | Request |
