Product Datasheet Search Results:
- 1N5464A
- Aeroflex / Metelics
- 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5464ACO
- Aeroflex / Metelics
- 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
- 1N5464A06
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
- 1N5464A12
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
- 1N5464A18
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
- 1N5464A
- Api Electronics Group
- VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5464A
- Codi Semiconductor, Inc.
- High Q - Up to 600 Voltage Variable Capacitors for UHF Tuning
- 1N5464A
- Knox Semiconductor, Inc.
- GENERAL PURPOSE ABRUPT VARACTOR DIODE
- 1N5464A
- Microsemi Corp.
- 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5464A
- Msi Electronics, Inc.
- Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
Product Details Search Results:
Aeroflex.com/1N5464A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position"...
1350 Bytes - 04:46:49, 19 March 2025
Aeroflex.com/1N5464ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"550","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1228 Bytes - 04:46:49, 19 March 2025
Alphaind.com/1N5464A06
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 04:46:49, 19 March 2025
Alphaind.com/1N5464A12
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 04:46:49, 19 March 2025
Alphaind.com/1N5464A18
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 04:46:49, 19 March 2025
Apitech.com/1N5464A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1390 Bytes - 04:46:49, 19 March 2025
Microsemi.com/1N5464A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"10 %","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...
1273 Bytes - 04:46:49, 19 March 2025
Various/1N5464A
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
762 Bytes - 04:46:49, 19 March 2025
Various/1N5464ACHIP
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
743 Bytes - 04:46:49, 19 March 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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