Product Datasheet Search Results:

1N5463C.pdf1 Pages, 34 KB, Original
1N5463C
Aeroflex / Metelics
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5463CCO.pdf1 Pages, 45 KB, Scan
1N5463CCO
Aeroflex / Metelics
10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5463CO.pdf1 Pages, 45 KB, Scan
1N5463CO
Aeroflex / Metelics
10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5463C06.pdf2 Pages, 99 KB, Scan
1N5463C06
Alpha Industries, Inc.
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C12.pdf2 Pages, 99 KB, Scan
1N5463C12
Alpha Industries, Inc.
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C18.pdf2 Pages, 99 KB, Scan
1N5463C18
Alpha Industries, Inc.
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C.pdf1 Pages, 59 KB, Scan
1N5463C
Api Electronics Group
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5463C.pdf2 Pages, 88 KB, Scan
1N5463C
Codi Semiconductor, Inc.
High Q - Up to 600 Voltage Variable Capacitors for UHF Tuning
1N5463C+JAN.pdf18 Pages, 505 KB, Scan
1N5463C+JAN
Defense Electronics Supply Center
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C+JANTX.pdf18 Pages, 505 KB, Scan
1N5463C+JANTX
Defense Electronics Supply Center
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C+JANTXV.pdf18 Pages, 505 KB, Scan
1N5463C+JANTXV
Defense Electronics Supply Center
30V Vrrm, 10pF Capacitance Varactor Diode
1N5463C.pdf3 Pages, 138 KB, Scan
1N5463C
Loral
JEDEC Tuning Varactors, DO-7 Glass Package

Product Details Search Results:

Aeroflex.com/1N5463C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position":...
1349 Bytes - 18:46:51, 09 January 2025
Aeroflex.com/1N5463CCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Diode Cap Tolerance":"2 %","Quality Factor-Min":"550","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1227 Bytes - 18:46:51, 09 January 2025
Aeroflex.com/1N5463CO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"550","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1220 Bytes - 18:46:51, 09 January 2025
Alphaind.com/1N5463C06
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 18:46:51, 09 January 2025
Alphaind.com/1N5463C12
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 18:46:51, 09 January 2025
Alphaind.com/1N5463C18
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 18:46:51, 09 January 2025
Apitech.com/1N5463C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"5...
1382 Bytes - 18:46:51, 09 January 2025
Dla.mil/1N5463C+JAN
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JAN1N5463C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
857 Bytes - 18:46:51, 09 January 2025
Dla.mil/1N5463C+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JANTX1N5463C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
868 Bytes - 18:46:51, 09 January 2025
Dla.mil/1N5463C+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JANTXV1N5463C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
874 Bytes - 18:46:51, 09 January 2025
Microsemi.com/1N5463C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"2 %","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1270 Bytes - 18:46:51, 09 January 2025
Various/1N5463C
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 18:46:51, 09 January 2025

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