Product Datasheet Search Results:

1N5452A.pdf1 Pages, 34 KB, Original
1N5452A
Aeroflex / Metelics
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5452ACO.pdf1 Pages, 45 KB, Scan
1N5452ACO
Aeroflex / Metelics
47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5452A06.pdf2 Pages, 99 KB, Scan
1N5452A06
Alpha Industries, Inc.
30V Vrrm, 47pF Capacitance Varactor Diode
1N5452A12.pdf2 Pages, 99 KB, Scan
1N5452A12
Alpha Industries, Inc.
30V Vrrm, 47pF Capacitance Varactor Diode
1N5452A18.pdf2 Pages, 99 KB, Scan
1N5452A18
Alpha Industries, Inc.
30V Vrrm, 47pF Capacitance Varactor Diode
1N5452A.pdf1 Pages, 61 KB, Scan
1N5452A
Api Electronics Group
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5452A.pdf1 Pages, 36 KB, Scan
1N5452A
Thomson-csf
Condensed Data Book 1977
1N5452A.pdf2 Pages, 151 KB, Original
1N5452A
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N5452A.pdf3 Pages, 138 KB, Scan
1N5452A
Loral
JEDEC Tuning Varactors, DO-7 Glass Package
1N5452A.pdf1 Pages, 188 KB, Scan
1N5452A
Motorola
European Master Selection Guide 1986
1N5452A.pdf1 Pages, 9 KB, Original
1N5452A
Knox Semiconductor, Inc.
GENERAL PURPOSE ABRUPT VARACTOR DIODE
1N5452A.pdf2 Pages, 207 KB, Scan
1N5452A
Microsemi Corp.
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

Product Details Search Results:

Aeroflex.com/1N5452A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position"...
1349 Bytes - 03:17:08, 21 September 2024
Aeroflex.com/1N5452ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.6","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"250","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1228 Bytes - 03:17:08, 21 September 2024
Alphaind.com/1N5452A06
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 03:17:08, 21 September 2024
Alphaind.com/1N5452A12
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 03:17:08, 21 September 2024
Alphaind.com/1N5452A18
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 03:17:08, 21 September 2024
Apitech.com/1N5452A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 03:17:08, 21 September 2024
Microsemi.com/1N5452A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"10 %","Quality Factor-Min":"250","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...
1273 Bytes - 03:17:08, 21 September 2024
Various/1N5452A
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 03:17:08, 21 September 2024
Various/1N5452ACHIP
{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
743 Bytes - 03:17:08, 21 September 2024