Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5443B
- Aeroflex / Metelics
- 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- 1N5443BCO
- Aeroflex / Metelics
- 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1 Pages, 45 KB, Scan- JAN1N5443B
- Aeroflex / Metelics
- 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- JANTX1N5443B
- Aeroflex / Metelics
- 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- JANTXV1N5443B
- Aeroflex / Metelics
- 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
2 Pages, 99 KB, Scan- 1N5443B06
- Alpha Industries, Inc.
- 30V Vrrm, 10pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5443B12
- Alpha Industries, Inc.
- 30V Vrrm, 10pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5443B18
- Alpha Industries, Inc.
- 30V Vrrm, 10pF Capacitance Varactor Diode
1 Pages, 59 KB, Scan- 1N5443B
- Api Electronics Group
- VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
4 Pages, 258 KB, Scan- 1N5443B
- Codi Semiconductor, Inc.
- 30V Vrrm, 10pF Capacitance Varactor Diode
1 Pages, 55 KB, Original- 1N5443B
- Crystalonics
- 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
Product Details Search Results:
Aeroflex.com/1N5443B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"400","Terminal Position":...
1351 Bytes - 11:18:59, 21 January 2025
Aeroflex.com/1N5443BCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.6","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"400","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1227 Bytes - 11:18:59, 21 January 2025
Aeroflex.com/JAN1N5443B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1323 Bytes - 11:18:59, 21 January 2025
Aeroflex.com/JANTX1N5443B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1336 Bytes - 11:18:59, 21 January 2025
Aeroflex.com/JANTXV1N5443B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1341 Bytes - 11:18:59, 21 January 2025
Alphaind.com/1N5443B06
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 11:18:59, 21 January 2025
Alphaind.com/1N5443B12
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 11:18:59, 21 January 2025
Alphaind.com/1N5443B18
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 11:18:59, 21 January 2025
Apitech.com/1N5443B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"4...
1381 Bytes - 11:18:59, 21 January 2025
Crystalonics.com/1N5443B
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"400","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configu...
1251 Bytes - 11:18:59, 21 January 2025
Microsemi.com/1N5443B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"400","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1270 Bytes - 11:18:59, 21 January 2025
Various/1N5443B
{"C1/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
762 Bytes - 11:18:59, 21 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FE_8443B231.pdf | 1.85 | 1 | Request | |
| DF_4443BA79.pdf | 0.57 | 1 | Request | |
| DF_443BA603.pdf | 0.47 | 1 | Request | |
| YOKOGAWA_443BF1F3.pdf | 3.38 | 1 | Request | |
| 1STQ001443B0000.pdf | 0.07 | 1 | Request | |
| 1STQ002443B0000.pdf | 0.09 | 1 | Request | |
| 1STQ007443B0000.pdf | 0.07 | 1 | Request |
