Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5145A
- Aeroflex / Metelics
- 27 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 51 KB, Scan- 1N5145ACO
- Aeroflex / Metelics
- 27 pF, 65 V, SILICON, VARIABLE CAPACITANCE DIODE
1 Pages, 61 KB, Scan- 1N5145A
- Api Electronics Group
- VHF-UHF BAND, 27 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
2 Pages, 151 KB, Original- 1N5145A
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
1 Pages, 47 KB, Original- 1N5145A
- Crystalonics
- 27 pF, 60 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
11 Pages, 330 KB, Scan- 1N5145A+JAN
- Defense Electronics Supply Center
- 60V Vrrm, 27pF Capacitance Varactor Diode
11 Pages, 330 KB, Scan- 1N5145A+JANTX
- Defense Electronics Supply Center
- 60V Vrrm, 27pF Capacitance Varactor Diode
11 Pages, 330 KB, Scan- 1N5145A+JANTXV
- Defense Electronics Supply Center
- 60V Vrrm, 27pF Capacitance Varactor Diode
4 Pages, 824 KB, Original- 1N5145A
- Motorola / Freescale Semiconductor
- Silicon EPICAP Diodes
1 Pages, 9 KB, Original- 1N5145A
- Knox Semiconductor, Inc.
- GENERAL PURPOSE ABRUPT VARACTOR DIODE
2 Pages, 117 KB, Scan- 1N5145A
- Msi Electronics, Inc.
- Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
Product Details Search Results:
Aeroflex.com/1N5145A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"200","Terminal Position":...
1349 Bytes - 01:25:28, 25 December 2024
Aeroflex.com/1N5145ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.2","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"200","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuratio...
1266 Bytes - 01:25:28, 25 December 2024
Apitech.com/1N5145A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"2...
1393 Bytes - 01:25:28, 25 December 2024
Crystalonics.com/1N5145A
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Package Style":"LONG FORM","Diode Cap Tolerance":"4.81 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"200","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Conf...
1253 Bytes - 01:25:28, 25 December 2024
Dla.mil/1N5145A+JAN
{"C1/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"200","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"Y","Mil Number":"JAN1N5145A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
856 Bytes - 01:25:28, 25 December 2024
Dla.mil/1N5145A+JANTX
{"C1/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"200","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"Y","Mil Number":"JANTX1N5145A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
869 Bytes - 01:25:28, 25 December 2024
Dla.mil/1N5145A+JANTXV
{"C1/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"200","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"Y","Mil Number":"JANTXV1N5145A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
875 Bytes - 01:25:28, 25 December 2024
Various/1N5145ACHIP
{"C1/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"200","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
742 Bytes - 01:25:28, 25 December 2024
