Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"DO-7, 2 PIN","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Diode Cap Tolerance":"1 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Packag...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Diode Cap Tolerance":"1 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...

{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...