Datasheet.Directory

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"150n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-41","I(O) Max.(A) Output Current":"2.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JAN1N4942","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"150n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-41","I(O) Max.(A) Output Current":"2.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTX1N4942","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"150n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-41","I(O) Max.(A) Output Current":"2.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTXV1N4942","@I(R) (A) (Test Condition)":"1.0"}...

{"Peak Rep Rev Volt":"200","Avg. Forward Curr (Max)":"1","Peak Non-Repetitive Surge Current":"15 A","Rectifier Type":"Switching Diode","Mounting":"Through Hole","Rad Hardened":"Yes","Forward Voltage":"1.3","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Rev Recov Time":"150","Package Type":"Case A","Peak Non-Repetitive Surge Current (Max)":"15","Rev Curr":"1","Configuration":"Single","Pin Count":"2"}...