Product Datasheet Search Results:
1 Pages, 57 KB, Scan- 1N4799
- Api Electronics Group
- 82 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 57 KB, Scan- 1N4799A
- Api Electronics Group
- 82 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 57 KB, Scan- 1N4799B
- Api Electronics Group
- 82 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 57 KB, Scan- 1N4799C
- Api Electronics Group
- 82 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
4 Pages, 258 KB, Scan- 1N4799
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
4 Pages, 258 KB, Scan- 1N4799A
- Codi Semiconductor, Inc.
- 15V Vrrm, 82pF Capacitance Varactor Diode
4 Pages, 258 KB, Scan- 1N4799B
- Codi Semiconductor, Inc.
- 15V Vrrm, 82pF Capacitance Varactor Diode
4 Pages, 258 KB, Scan- 1N4799C
- Codi Semiconductor, Inc.
- 15V Vrrm, 82pF Capacitance Varactor Diode
2 Pages, 151 KB, Original- 1N4799D
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
2 Pages, 112 KB, Scan- 1N4799
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
1 Pages, 48 KB, Scan- 1N4799
- Eastron Corp.
- Capacitance Varactor Diode, TO-7
1 Pages, 48 KB, Original- 1N4799A
- Eastron Corp.
- Voltage Variable Capacitor
Product Details Search Results:
Apitech.com/1N4799
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"1.79","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"20 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1272 Bytes - 08:26:52, 14 October 2024
Apitech.com/1N4799A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"1.79","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1279 Bytes - 08:26:52, 14 October 2024
Apitech.com/1N4799B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"1.79","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1278 Bytes - 08:26:52, 14 October 2024
Apitech.com/1N4799C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"1.79","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1280 Bytes - 08:26:52, 14 October 2024
Various/1N4799
{"C1/C2 Min. Capacitance Ratio":"2.36","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
831 Bytes - 08:26:52, 14 October 2024
Various/1N4799A
{"C1/C2 Min. Capacitance Ratio":"2.36","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 08:26:52, 14 October 2024
Various/1N4799B
{"C1/C2 Min. Capacitance Ratio":"2.36","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 08:26:52, 14 October 2024
Various/1N4799C
{"C1/C2 Min. Capacitance Ratio":"2.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
835 Bytes - 08:26:52, 14 October 2024
Various/1N4799D
{"C1/C2 Min. Capacitance Ratio":"2.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
833 Bytes - 08:26:52, 14 October 2024
