Product Datasheet Search Results:

1N3779.pdf1 Pages, 50 KB, Original
1N3779
Apd Semiconductor, Inc.
TEMPERATURE COMPENSATED ZENER DIODES
1N3779.pdf1 Pages, 86 KB, Scan
1N3779
Motorola
Motorola Semiconductor Datasheet Library
1N3779.pdf1 Pages, 100 KB, Scan
1N3779
Microsemi Corp.
6.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-7
1N3779.pdf1 Pages, 30 KB, Original
1N3779
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
1N3779.pdf1 Pages, 100 KB, Scan
1N3779
International Semiconductor, Inc.
Diode, Temperature Compensated Zener Reference Diode

Product Details Search Results:

Microsemi.com/1N3779
{"Status":"ACTIVE","Ref Voltage Temp Coeff-Max":"1 mV/Cel","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DO-7, 2 PIN","Working Voltage-Nom":"6.7 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.4000 W","Reference Voltage Tol-Max":"5 %","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"VOLTAGE REFERENCE DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technolog...
1233 Bytes - 20:58:16, 05 January 2025
Various/1N3779
{"Z(z) Max. (Ohms) Dyn. Imped.":"10","V(Z) Nom.(V) Reference Voltage":"6.5","Package":"DO-7","Temp.Coef. (pp/10,000) Max.":"1.5","Tolerance (%)":"3","P(D) Max.(W) Power Dissipation":"400m","@I(Z) (A) (Test Condition)":"7.5m","Military":"N"}...
707 Bytes - 20:58:16, 05 January 2025

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