Product Datasheet Search Results:
- 1N3655A
- Advanced Semiconductor, Inc.
- SILICON, S BAND, MIXER DIODE, DO-23
- 1N3655AM
- Advanced Semiconductor, Inc.
- SILICON, S BAND, MIXER DIODE, DO-23
- 1N3655AMR
- Advanced Semiconductor, Inc.
- SILICON, S BAND, MIXER DIODE, DO-23
- 1N3655A
- Bkc International
- Silicon Point Contact Mixer Diodes
- 1N3655AM
- Bkc International
- Silicon Point Contact Mixer Diodes
- 1N3655AMR
- Bkc International
- Silicon Point Contact Mixer Diodes
Product Details Search Results:
Advancedsemiconductor.com/1N3655A
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, DO-23, 2 PIN","Frequency Band":"S BAND","Noise Figure-Max":"7 dB","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"MIXER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"POINT CONTACT","Number of Terminals":"2","Number of Elements":"1"}...
1147 Bytes - 22:50:46, 01 March 2025
Advancedsemiconductor.com/1N3655AM
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, DO-23, 2 PIN","Frequency Band":"S BAND","Noise Figure-Max":"7 dB","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"MIXER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"POINT CONTACT","Number of Terminals":"2","Number of Elements":"1"}...
1155 Bytes - 22:50:46, 01 March 2025
Advancedsemiconductor.com/1N3655AMR
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, DO-23, 2 PIN","Frequency Band":"S BAND","Noise Figure-Max":"7 dB","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"MIXER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"POINT CONTACT","Number of Terminals":"2","Number of Elements":"1"}...
1161 Bytes - 22:50:46, 01 March 2025
Dla.mil/1N3655A+JAN
{"z(if) Max. (Ohms) IF Impedance":"450","Mil Number":"JAN1N3655A","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-23","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"Y","f(test) (Hz) Test Frequency":"3.1G","@Pin (W) (Test Condition)":"0.5m"}...
862 Bytes - 22:50:46, 01 March 2025
Dla.mil/1N3655AM+JAN
{"z(if) Max. (Ohms) IF Impedance":"450","Mil Number":"JAN1N3655AM","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-22","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"Y","f(test) (Hz) Test Frequency":"3.1G","Frequency Max. (Hz)":"4G","Frequency Min. (Hz)":"2G"}...
887 Bytes - 22:50:46, 01 March 2025
Dla.mil/1N3655AMR+JAN
{"z(if) Max. (Ohms) IF Impedance":"450","Mil Number":"JAN1N3655AMR","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-22","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"Y","f(test) (Hz) Test Frequency":"3.1G","Frequency Max. (Hz)":"4G","Frequency Min. (Hz)":"2G"}...
893 Bytes - 22:50:46, 01 March 2025
Various/1N3655A
{"z(if) Max. (Ohms) IF Impedance":"450","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-23","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"N","f(test) (Hz) Test Frequency":"3.1G","@Pin (W) (Test Condition)":"0.5m"}...
767 Bytes - 22:50:46, 01 March 2025
Various/1N3655AM
{"z(if) Max. (Ohms) IF Impedance":"450","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-22","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"N","f(test) (Hz) Test Frequency":"3.1G","Frequency Max. (Hz)":"4G","Frequency Min. (Hz)":"2G"}...
791 Bytes - 22:50:46, 01 March 2025
Various/1N3655AMR
{"z(if) Max. (Ohms) IF Impedance":"450","Frequency Band":"S","Semiconductor Material":"Silicon","z(if) Min. (Ohms) IF Impedance":"350","Package":"DO-22","Noise Figure Max. (dB)":"7.0","VSWR(in) Max. Input VSWR":"1.3","Military":"N","f(test) (Hz) Test Frequency":"3.1G","Frequency Max. (Hz)":"4G","Frequency Min. (Hz)":"2G"}...
797 Bytes - 22:50:46, 01 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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T3401N36K.pdf | 0.35 | 1 | Request | |
T2001N36K.pdf | 0.33 | 1 | Request | |
D3501N36K.pdf | 0.21 | 1 | Request | |
T1601N36K.pdf | 0.33 | 1 | Request | |
T3801N36K.pdf | 0.34 | 1 | Request | |
T901N36K.pdf | 0.33 | 1 | Request | |
7B05F061N368G1.pdf | 0.07 | 1 | Request |