© 2009 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ300 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 440 A
IATC= 25°C40A
EAS TC= 25°C3J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 1390 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 300 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 50 µA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 60A, Note 1 19 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK160N30T
IXFX160N30T
VDSS = 300V
ID25 = 160A
RDS(on) ≤≤
≤≤
≤ 19mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
DS100127(03/09)
GigaMOSTM
Power MOSFET
G = Gate D = Drain
S = Source TAB = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK160N30T
IXFX160N30T
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 100 160 S
Ciss 28 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1770 pF
Crss 125 pF
td(on) 37 ns
tr 38 ns
td(off) 105 ns
tf25 ns
Qg(on) 335 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 123 nC
Qgd 56 nC
RthJC 0.09 °C/W
RthCS 0.15 °C/W
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 160 A
ISM Repetitive, Pulse Width Limited by TJM 640 A
VSD IF = 60A, VGS = 0V, Note 1 1.3 V
trr 200 ns
QRM 1.09 µC
IRM 13 A
IF = 80A, -di/dt = 100A/µs
VR = 75V, VGS = 0V
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All rights reserved
IXFK160N30T
IXFX160N30T
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
20
40
60
80
100
120
140
160
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
DS
- Volts
I
D
- A mpere s
V
GS
= 10V
7V
6
V
5
V
5.5
V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 101214161820
V
DS
- Vo lts
I
D
- A mpe res
V
GS
= 10V
7V
5
V
5.5
V
6
V
Fi g . 3. Outpu t Char ac ter i sti c s
@ 125ºC
0
20
40
60
80
100
120
140
160
01234567
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
7V
6
V
5
V
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 160A
I
D
= 80A
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 40 80 120 160 200 240 280
I
D
- Amperes
R
DS(on)
- N orm a lize d
V
GS
= 10
V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temp e r atu re
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigrade
I
D
- A mpe re s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK160N30T
IXFX160N30T
IXYS REF: F_160N30T(9E)3-23-09
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2
V
GS
- Vo lts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180 200
I
D
- A mpere s
g
f s
- Siem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
- Vo lts
I
S
- A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- V olt s
V
DS
= 150V
I
D
= 80A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - P icoFarads
f
= 1 MHz Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100 1000
V
DS
- V olts
I
D
- A mpe re s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
© 2009 IXYS CORPORATION, All rights reserved
IXFK160N30T
IXFX160N30T
IXYS REF: F_160N30T(9E)3-23-09
Fi g . 13. Maxi mum Transi en t Th er mal I mped an ce
0.001
0.010
0.100
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
