I XTK90P20P PolarPTM Power MOSFET VDSS ID25 IXTX90P20P = = RDS(on) - 200V - 90A 44m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 200 V VDGR TJ = 25C to 150C, RGS = 1M - 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS TC = 25C TC = 25C dV/dt IS IDM, VDD VDSS, TJ 150C PD TC = 25C - 90 A - 270 A - 90 3.5 A J 10 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 20..120 / 4.5..27 1.13 / 10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force Mounting Torque Weight PLUS247 TO-264 (PLUS247) (TO-264) G (TAB) G = Gate S = Source z z z z VGS = 0V, ID = - 250A - 200 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS , VGS= 0V - 50 A - 250 A z 44 m z VGS = -10V, ID = 0.5 * ID25, Note 1 V z BVDSS RDS(on) z V Easy to Mount Space Savings High Power Density Applications z z z (c) 2009 IXYS CORPORATION, All Rights Reserved International Standard Packages Rugged PolarPTM Process Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages Characteristic Values Min. Typ. Max. TJ = 125C D = Drain TAB = Drain Features z - 4.0 (TAB) S PLUS247 (IXTX) z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99933B(03/09) IXTK90P20P IXTX90P20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 51 S 12 nF 2210 pF 250 pF 32 ns 60 ns 89 ns 28 ns 205 nC 45 nC 80 nC TO-264 (IXTK) Outline 0.14 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A IF = - 45A, VGS = 0V, Note 1 - 3.2 V IF = - 45A, -di/dt = -150A/s VR = -100V, VGS = 0V 315 ns 6.6 C - 42 A PLUS 247TM (IXTX) Outline Terminals: Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK90P20P IXTX90P20P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C -90 -240 VGS = -10V - 9V - 8V -80 -70 -180 - 7V -60 ID - Amperes ID - Amperes VGS = -10V - 9V -210 -50 - 6V -40 - 8V -150 -120 - 7V -90 -30 - 6V -60 -20 - 5V -30 -10 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -3 -6 -12 -15 -18 -21 -24 -27 VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = - 45A vs. Junction Temperature -30 2.4 VGS = -10V - 9V - 8V -80 VGS = -10V 2.2 -70 2.0 RDS(on) - Normalized - 7V -60 -50 - 6V -40 -30 -20 1.8 I D = - 90A 1.6 I D = - 45A 1.4 1.2 1.0 0.8 - 5V -10 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 VDS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -100 2.6 2.4 -90 VGS = -10V -80 TJ = 125C 2.2 -70 2.0 ID - Amperes RDS(on) - Normalized -9 VDS - Volts -90 ID - Amperes - 5V 1.8 1.6 1.4 -60 -50 -40 -30 1.2 -20 TJ = 25C 1.0 -10 0 0.8 0 -30 -60 -90 -120 -150 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved -180 -210 -240 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTK90P20P IXTX90P20P Fig. 7. Input Admittance Fig. 8. Transconductance 100 -120 TJ = - 40C 25C 125C -100 80 70 g f s - Siemens -80 ID - Amperes TJ = - 40C 90 -60 -40 25C 60 50 125C 40 30 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -80 -100 -120 -140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -270 -10 -240 -9 VDS = -100V I D = - 45A -8 -210 I G = -1mA -7 VGS - Volts IS - Amperes -180 -150 -120 TJ = 125C -90 -6 -5 -4 -3 TJ = 25C -60 -2 -30 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 80 100 120 140 160 180 200 220 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 100,000 1,000 TJ = 150C f = 1MHz RDS(on) Limit TC = 25C Single Pulse Ciss 25s - 100 10,000 ID - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts Coss 1,000 100s 1ms - 10 100ms Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 10ms DC - 100 VDS - Volts - 1000 IXTK90P20P IXTX90P20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D