© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 90 A
IDM TC= 25°C, Pulse Width Limited by TJM - 270 A
IATC= 25°C - 90 A
EAS TC= 25°C 3.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force (PLUS247) 20..120 / 4.5..27 N/lb.
Mounting Torque (TO-264) 1.13 / 10 Nm/lb.in.
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250µA - 200 V
VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS , VGS= 0V - 50 µA
TJ = 125°C - 250 µA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 44 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTK90P20P
IXTX90P20P
VDSS = - 200V
ID25 = - 90A
RDS(on) ≤≤
≤≤
≤ 44mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zRugged PolarPTM Process
zAvalanche Rated
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
GDS
TO-264 (IXTK)
PLUS247 (IXTX)
(TAB)
DS99933B(03/09)
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
IXTK90P20P
IXTX90P20P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 30 51 S
Ciss 12 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 2210 pF
Crss 250 pF
td(on) 32 ns
tr 60 ns
td(off) 89 ns
tf 28 ns
Qg(on) 205 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 nC
Qgd 80 nC
RthJC 0.14 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 90 A
ISM Repetitive, Pulse Width Limited by TJM - 360 A
VSD IF = - 45A, VGS = 0V, Note 1 - 3.2 V
trr 315 ns
QRM 6.6 µC
IRM - 42 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = - 45A, -di/dt = -150A/µs
VR = -100V, VGS = 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
TO-264 (IXTK) Outline
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK90P20P
IXTX90P20P
Fig. 1. Output Characteristics
@ 25º C
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- V olts
I
D
- A mpe res
V
GS
= -10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 2. Extended Output Characteristics
@ 25º C
-240
-210
-180
-150
-120
-90
-60
-30
0-30-27-24-21-18-15-12-9-6-30V
DS
- Volts
I
D
- A mpe re s
V
GS
= - 10V
- 9V
- 8
V
- 6
V
- 7
V
- 5
V
Fi g . 3. Outp u t C h aracter i stics
@ 125ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- A mpe res
V
GS
= - 10V
- 9V
- 8V
- 6
V
- 5
V
- 7
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 45A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Centigrade
R
DS(on)
- N ormalize d
V
GS
= -10V
I
D
= - 90
A
I
D
= - 45
A
Fig. 5. R
DS(on)
Normalized to I
D
= - 45A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-240-210-180-150-120-90-60-300I
D
- Ampe res
R
DS(on)
- N ormalize d
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6 . Maxi mu m D r ai n C u r r ent vs.
Case Temper atu r e
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Centigrade
I
D
- A mpe re s
IXTK90P20P
IXTX90P20P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-120
-100
-80
-60
-40
-20
0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- A mpe re s
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
-140-120-100-80-60-40-200
I
D
- Amp e res
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 9. F or war d Vo l tag e D r o p of
Intrinsic Diode
-270
-240
-210
-180
-150
-120
-90
-60
-30
0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Vo lts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= - 100V
I
D
= - 45A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- A mpe re s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
----
100ms
-
-
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D
IXTK90P20P
IXTX90P20P
F i g. 13 . Maxi mum Tr ansien t Th erma l I mp edan ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
