SIEMENS PNP Silicon AF Transistors Features @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz @ Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) BC 856W ... BC 860W i VS005561 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C | SOT-323 BC 856 BW 3Bs Q62702-C2292 BC 857 AW 3Es Q62702-C2293 BC 857 BW 3Fs Q62702-C2294 BC 857 CW 3Gs Q62702-C2295 BC 858 AW 3Js Q62702-C2296 BC 858 BW 3Ks Q62702-C2297 BC 858 CW 3Ls Q62702-C2298 BC 859 AW 4As Q62702-C2299 BC 859 BW 4Bs Q62702-C2300 BC 859 CW 4Cs Q62702-C2301 BC 860 BW 4Fs Q62702-C2302 BC 860 CW 4Gs Q62702-C2303 1)For detailed information see chapter Package Outlines. Semiconductor Group 511SIEMENS BC 856W ... BC 860W Maximum Ratings Description Symbol BC 856W| BC 857W| BC 858W | Unit BC 860W| BC s59W Collector-emitter voltage Vceo 65 45 30 Vv Collector-base voltage Vcso 80 50 30 Vv Collector-emitter voltage Vces 80 50 30 Vv Emitter-base voitage Veso 5 5 5 Vv Collector current Ic 100 mA Collector peak current Tom 200 mA Total power dissipation, Ts=115 C | Pio 250 mw Junction ternperature Ti 150 Cc Storage temperature range Trig -65 to 150 Cc Thermal Resistance Junction - ambient") Rin aa < 240 K/W Junction - soldering point Rivas < 105 K/AV Semiconductor Group 512SIEMENS BC 856w ... BC 860W Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vieryceo Vv Ic=10mA BC 856W 65 ~ - BC 857W, BC 860W 45 _ - BC 858W, BC 859W 30 - - Collector-base breakdown voltage Vieryceo Ie =10pA BC 856W 80 - - BC 857W, BC 860W 50 ~ - BC 858W, BC 859W 30 - - Collector-emitter breakdown voitage Vipryces Ie = 10 pA, Vee=0 BC 856W 80 - - BC 857W, BC 860W 50 ~ - BC 858W, BC 859W 30 - - Emitter-base breakdown voltage Vereen | 5 - - le=1pA Collector cutoff current Iceo Ves = 30 V = -~ 15 nA Ves = 30 V, Ta= 150C - ~ 5 pA DC current gain hre - Ic = 10 pA, Vee=5V BC 856 AW ... BC 859 AW - 140 |- BC 856 BW ... BC 860 BW - 250 |- BC 857 CW ... BC 860 CW ~ 480 - Io =2 mA, Vce=5V BC 856 AW ... BC 859 AW 125 180 | 250 BC 856 BW ... BC 860 BW 220 |290 | 475 BC 857 CW ... BC 860 CW 420 |520 | 800 Collector-emitter saturation voltage) Vocesat mV Ic= 10 mA, is =0.5 MA - 75 300 Ic = 100 mA, Jn = 5 MA - 250 | 650 Base-emitter saturation voltage") Veesst Iic= 10 MA, 2 =0.5 MA - 700 - Ic= 100 mA, a= 5 mA - 850 ~ Base-emitter voltage VBE(on) Ie= 2mMA, Vcc =5V 600 650 750 Io=10mMA, Vee =5V - - 820 DPulse test: rs 300 ps, D = 2 %. Semiconductor Group 13SIEMENS BC 856W ... BC 860W Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. AC characteristics Transition frequency ff - 250 ~ MHz Ic = 20 mA, Vee = 5 V, f= 100 MHz Output capacitance Cobo - 3 ~ pF Ves = 10 V, f= 1 MHz Input capacitance Crvo - 10 ~ Vee = 0.5 V, f= 1 MHz Short-circuit input impedance hite kQ Ic=2 mA, Vee =5 V, f= 1 kHz BC 856 AW ... BC 859 AW - 2.7 ~ BC 856 BW ... BC 860 BW - 4.5 ~ BC 857 CW ... BC 860 CW - 8.7 ~ Open-circuit reverse voltage transfer ratio hie 10-4 Ie=2mA, Vee =5V, f= 1 kHz BC 856 AW ... BC 859 AW ~ 1.5 ~ BC 856 BW ... BC 860 BW ~ 2.0 ~ BC 857 CW ... BC 860 CW - 3.0 ~ Short-circuit forward current transfer ratio hare - Ic=2MA, Vee=5 V, f= 1 kHz BC 856 AW ... BC 859 AW - 200 ~ BC 856 BW ... BC 860 BW - 330 - BC 857 CW ... BC 860 CW - 600 - Open-circuit output admittance hee nS Io=2 mA, Vee=5V, f= 1 kHz BC 856 AW ... BC 859 AW - 18 - BC 856 BW ... BC 860 BW - 30 - BC 857 CW ... BC 860 CW - 60 _ Noise figure F dB Ic = 0.2 mA, Vee =5 V, Rs = 2 kQ f=30Hz ... 15 kHz BC 859W - 1.2 4 BC 860W - 1.0 3 f= 1 kHz, af= 200 Hz BC 859W - 1.0 4 BC 860W - 1.0 4 Equivalent noise voltage Vn uV Ie =0.2 mA, Vee =5 V, Rs = 2 kO f= 10 Hz... 50 Hz BC 860W - ~ 0.110 Semiconductor Group 514SIEMENS BC 856W ... BC 860W Total power dissipation Pia = f (Ta*; Ts) * Package mounted on epoxy 400 EHPO0S44 mW Feet 300 \ \ m| \is 200 100 \ % 50 100 c 150 ~ hil, Permissibie pulse load Prt mex/Prt oc = f (tp) Sui | oy Hil Cos PS NU cr SSS | TT TTT 108 1073 to 1078 107 ~s 10 fp Semiconductor Group Collector-base capacitance Ccso = f (Vcee) Emitter-base capacitance Ceso = f (Veao) BC 856...860 12 Coag PF (Ceao) 0 107! 5 10 vy 1a > Vegg (Veao) Transition frequency fr = f (ic) Vee=5V 5 10' mA 10? i, 10! 10-! 5 10 515SIEMENS BC 856W ... BC 860W Collector cutoff current Iceo = f (Ta) Vce = 30 V 104 EHPOOSES nA | ceo 103 5 10? 5 Qa 50 100 C 150 DC current gain hre = f (/c) Vee =5V 103 Be 856..860 EHPO0382 5 [100 hee 10? 10! 0 1072-55 1071 510' mA 10? i 5 10 Semiconductor Group Collector-emitter saturation voltage Ic= SF (Vcesa), Are = 20 102 BC_BS6...860 mA 1a! 5 10 5 107! 0 01 02 O3 O04 4905 Vee sot Base-emitter saturation voltage Ie= Io | 516 f (Versa), bre = 20 BC 856...860 EHPOOS79 10? mA to! 5 10 0 0.2 0.4 06 08 j%V t.2 > Veg satSIEMENS BC 856W ... BC 860W h parameter fe = f (Jc) normalized Vee=5V 12 BC 896.860 EHP00383 10% 107) 107) 5 10 ma 10! om Te Noise figure F = f (Vce) Ic = 0.2 MA, Rs = 2 kQ, f= 1 KHz BC &56...860 EHPOO3a5 20 dB york S108 10! y 102 Semiconductor Group h parameter he = f (Vce) normalized Ice=2mA BC 856...860 EMPDOI84 2.0 0.5 0 10 20 Y 30 ae Yor Noise figure F =f (/) Ic = 0.2 mA, Vee =5 V, Rs =2kQ AC _856...860 EHPOOI86 dB 1072-107! 10 nn 517 10! kHz 102SIEMENS BC 856W ... BC 860W Noise figure F = f (/c) Vee =5 V, f= 120 Hz BC 856...860 EHPO0387 20 dB 0 1075 10-2 107" = 40 ma 10! we Noise figure F = f (/c) Vee = 5 V, f= 10 kHz BC 856...860 EHPOO389 20 dB 0 1073 10-2, 1077 10 ma 10! ote Semiconductor Group Noise figure F = f (Ic) Vee = 5 V, f= 1 kHz BC 856...860 20 da 0 10-3 10-2 107! 10 mA 10! we 518