PD - 94895B IRLML5203PbF HEXFET(R) Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS(on) max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A * Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ' 6 Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -3.0 -2.4 -24 1.25 0.80 10 20 -55 to + 150 V mW/C V C Max. Units 100 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 05/13/10 IRLML5203PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- -1.0 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 98 VGS = -10V, ID = -3.0A m 165 VGS = -4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V 2.4 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- R G = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -1.3 -24 --- --- --- --- 17 12 -1.2 26 18 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLML5203PbF 100 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V 10 1 -2.70V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 1 -2.70V RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C 1 TJ = 25 C V DS = -15V 20s PULSE WIDTH 4.0 5.0 6.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 3.0 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics -VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) 0.1 2.0 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 7.0 ID = 3.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML5203PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 600 Ciss 400 200 Coss Crss 0 1 10 20 -VGS , Gate-to-Source Voltage (V) 800 VDS =-24V VDS =-15V 16 12 8 4 0 100 ID = -3.0A 0 4 8 12 16 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 10 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.8 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML5203PbF 3.0 VDS -ID , Drain Current (A) VGS D.U.T. RG 2.0 RD - + VDD VGS Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) 0.0 tr t d(off) tf VGS 25 50 75 100 125 TC , Case Temperature ( C) 10% 150 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.14 0.13 0.12 0.11 0.10 ID = -3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -V GS, Gate -to -Source Voltage (V) RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance ( ) IRLML5203PbF 0.40 0.30 VGS = -4.5V 0.20 VGS = -10V 0.10 0.00 0 4 8 12 16 -I D , Drain Current (A) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLML5203PbF 30 20 ID = -250A Power (W) -VGS(th) , Variace ( V ) 2.5 2.0 10 0 1.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 15. Typical Power Vs. Time 7 IRLML5203PbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 L1 Recommended Footprint c L2 0.972 0.950 0.802 MILLIMETERS INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 3X L 7 1.900 Micro3 (SOT-23/TO-236AB) Part Marking Information 1RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU '$7(&2'( 3$57180%(5 : ,)35(&('('%</$67',*,72)&$/(1'$5<($5 /($')5(( &X:,5( /27&2'( +$/2*(1)5(( ; 3$57180%(5&2'(5()(5(1&( $ ,5/0/ % ,5/0/ & ,5/0/ ' ,5/0/ ( ,5/0/ ) ,5/0/ * ,5/0/ + ,5/0/ , ,5/0/ - ,5/0/ . ,5/0/ / ,5/0/ 0 ,5/0/ 1 ,5/0/ 3 ,5/0/ 5 ,5/0/ <($5 < :25. :((. : $ % & ' ; < = : ,)35(&('('%<$/(77(5 <($5 < $ % & ' ( ) * + . :25. :((. : $ % & ' ; Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML5203PbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2010 www.irf.com 9