SFH421 - OSRAM Opto Semiconductors

SFH 421

SFH 426

GaAlAs-IR-Lum inesz enzdi ode in SM T-Gehäuse

GaAlAs Infrared Emitter in SMT Package

SFH 421 SFH 426

2002-03-14 1

Wesentliche Merkmale

• GaAIAs-LED mit sehr hohem Wirkungsgrad

• Gute Linearität (Ie = f [IF]) bei hohen Strömen

• Gleichstrom- (mit Modulation) oder

Impulsbetrieb möglich

• Hohe Zuverlässigkeit

• Hohe Impulsbelastbarkeit

• Oberflächenmontage geeignet

• Gegurtet lieferbar

• SFH 421 Gehäusegleich mit SFH 320

SFH 426 Gehäusegleich mit SFH 325

• SFH 426: Nur für IR-Reflow-Lötung geeignet.

Anwendungen

• Miniaturlichtschranken für Gleich- und

Wechsellichtbetrieb, Lochstreifenleser

• Industrieelektronik

• „Messen/Steuern/Regeln“

• Automobiltechnik

• Sensorik

• Alarm- und Sicherungssysteme

• IR-Freiraumübertragung

Typ

Type Bestellnummer

Ordering Code Gehäuse

Package

SFH 421 Q62702-P1055

Kathodenkennzeichnung: abgesetzte Ecke

cathode marking: bevelled edge

TOPLED®

SFH 426 Q62702-P0331 SIDELED

Features

• Very highly efficient GaAIAs-LED

• Good Linearity (Ie = f [IF]) at high currents

• DC (with modulation) or pulsed operations are

possible

• High reliability

• High pulse handling capability

• Suitable for surface mounting (SMT)

• Available on tape and reel

• SFH 421 same package as SFH 320

SFH 426 same package as SFH 325

• SFH 426: Suitable only for IR-reflow soldering.

Applications

• Miniature photointerrupters

• Industrial electronics

• For drive and control circuits

• Automotive technology

• Sensor technology

• Alarm and safety equipment

• IR free air transmission

2002-03-14 2

SFH 421, SFH 426

Grenzwerte (TA = 25 °C)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 100 °C

Sperrspannung

Reverse voltage VR5V

Durchlaßstrom

Forward current IF100 mA

Stoßstrom, τ = 10 µs, D = 0

Surge current IFSM 2.5 A

Verlustleistung

Power dissipation Ptot 180 mW

Wärmewiderstand Sperrschic ht - Umgebung bei

Montage auf FR4 Platine, Padgröße je 16 mm2

Thermal resistance junction - ambient mounted

on PC-board (FR4), padsize 16 mm2 each

Wärmewiderstand Sperrschicht - Lötstelle bei

Montage auf Metall-Block

Thermal resistance junction - soldering point,

mounted on metal block

RthJA

RthJS

450

≈ 200

K/W

SFH 421, SFH 426

2002-03-14 3

Kennwerte (TA = 25 °C)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

IF = 100 mA, tp = 20 ms

λpeak 880 nm

Spektrale Bandbreite bei 50% von Imax

Spectral bandwidth at 50% of Imax

IF = 100 m A

∆λ 80 nm

Abstrahlwinkel

Half angle ϕ± 60 Grad

deg.

Aktive Chipfläche

Active chip area A0.09 mm2

Abmessungen der aktiven Chipfläche

Dimensions of the active chip area L×B

L×W0.3 ×0.3 mm

Schaltzeiten, Ie von 10% auf 90% und von 90%

auf 10%, bei IF = 100 mA, RL = 50 Ω

Switching tim es, Ιe from 10% to 90% and from

90% to 10%, IF = 100 mA, RL = 50 Ω

tr, tf0.5 µs

Kapazität,

Capacitance

VR = 0 V, f = 1 MHz

Co15 pF

Durchlaßspannung,

Forward voltage

IF = 100 mA, tp = 20 ms

IF = 1 A, tp = 100 µsVF

1.5 (≤ 1.8)

3.0 (≤ 3.8) V

Sperrstrom,

Reverse current

VR = 5 V

IR0.01 (≤ 1) µA

Gesamtstrahlungsfluß,

Total radiant flux

IF = 100 mA, tp = 20 ms

Φe23 mW

Temperaturkoeffizient von Ie bzw. Φe,

IF = 100 mA

Temperature coefficient of Ie or Φe, IF = 100 mA

TCI– 0.5 %/K

Temperaturkoeffizient von VF, IF = 100 mA

Temperature coefficient of VF, IF = 100 mA TCV– 2mV/K

Temperaturkoeffizient von λ, IF = 100 mA

Temperature coefficient of λ, IF = 100 mA TCλ+ 0.25 nm/ K

2002-03-14 4

SFH 421, SFH 426

Strahlstärke Ie in Achsrichtung

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity Ie in Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Parameter Symbol Werte

Values Einheit

Unit

Strahlstärke

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie> 4 mW/sr

Strahlstärke

Radiant intensity

IF = 1 A, tp = 100 µs

Ie typ 48 mW/sr

SFH 421, SFH 426

2002-03-14 5

Relati ve Sp ectral Emissi o n

Irel = f (λ)

Forward Cu rrent

IF = f (VF) single pulse, tp = 20 µs

Radiation Characteristics Sel = f (ϕ)

750

Ιrel

OHR00877

800 850 900 950 nm 1000

100

OHR00881

-3

-2

-1

0123456V8

0.2

0.4

1.0

0.8

0.6

1.0 0.8 0.6 0.4

0˚10˚20˚40˚ 30˚

OHL01660

50˚

60˚

70˚

80˚

90˚

100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Radiant Intensity

Single pulse , tp = 20 µs

Permissible Pulse Ha ndl i ng

Capability IF = f (tp), TA = 25 °C

duty cycle D = parameter

Ιe

Ιe 100 mA = f (IF)

OHR00878

Ιe

-3

-2

-1

10 101102104

(100mA)

OHR00886

-5

10 s

0.005=

0.5

0.2

0.1

0.01

0.02

0.05

-4

-3

-2

-1

Max. Permissible Forward Current

IF = f (TA)

OHR00883

100

120

20 40 60 80 100 120

˚C

RthjA = 450 K/W

2002-03-14 6

SFH 421, SFH 426

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are spe cified as follows: mm (i nc h).

SFH 421

GPLY6724

0.7 (0.028)

0.9 (0.035)

1.7 (0.067)

2.1 (0.083)

0.12 (0.005)

0.18 (0.007)

0.5 (0.020)

1.1 (0.043)

3.3 (0.130)

3.7 (0.146)

0.4 (0.016)

0.6 (0.024)

2.6 (0.102)

3.0 (0.118)

2.1 (0.083)

2.3 (0.091)

Cathode marking

3.0 (0.118)

3.4 (0.134)

(2.4) (0.095)

0.1 (0.004) (typ.)

4˚±1

SFH 426

GPLY6880

(R1)

Cathode marking

Cathode Anode

(2.4 (0.094))

2.8 (0.110)

2.4 (0.094)

4.2 (0.165)

3.8 (0.150)

0.9 (0.035)

1.1 (0.043)

spacing

2.54 (0.100)

0.7 (0.028)

(2.85 (0.112))

(1.4 (0.055))

(0.3 (0.012))

3.4 (0.134)

3.8 (0.150)

4.2 (0.165)

(2.9 (0.114))

SFH 421, SFH 426

2002-03-14 7

Zusätzliche Informationen über allgem eine Lötbeding ungen erhalten S ie auf Anfrage.

For addi tio nal information on general soldering condition s pleas e c ontact us.

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics .

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user m ay be endangered.

Löthinweise

Soldering Conditions

Bauform

Types Tauch-, Schwall- und Schlepplötung

Dip, Wave and Drag Soldering Reflowlötung

Reflow Soldering

Lötbad-

temperatur

Temperature

of the

Soldering

Bath

Maximal

zulässige

Lötzeit

Max. Perm.

Soldering

Time

Abstand

Lötstelle –

Gehäuse

Distance

between

Solder Joint

and Case

Lötzonen-

temperatur

Temperature

of Soldering

Zone

Maximale

Durchlaufzeit

Max. Transit

Time

TOPLED®

SIDELED 260 °C

260 °C8 s

8 s –

–245 °C

245 °C10 s

10 s