DSA15IM200UC
4
1
3
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode
Part number
DSA15IM200UC
Marking on Product: SFMAUI
Backside: cathode
FAV
F
V V0.78
RRM
15
200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20170927dData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA15IM200UC
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
0.94
R2 K/W
R
min.
15
V
RSM
V
250T = 25°C
VJ
T = °C
VJ
mA2.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
75 WT = 25°C
C
RK/W
15
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.10
T = 25°C
VJ
125
V
F0
V
0.53T = °C
VJ
175
r
F
10.8
mΩ
V
0.78T = °C
VJ
I = A
F
V
15
0.95
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V
200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
67
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
200 A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20170927dData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA15IM200UC
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Z Y Y WW
Logo
Part number
Assembly Line
abcdefg
P
r
odu
c
t
M
a
r
k
i
n
g
IXYS
Date Code
D
S
A
15
IM
200
UC
Part description
Diode
Schottky Diode
low VF
Single Diode
TO-252AA (DPak)
=
=
=
DSA15IM45UC TO-252AA (DPak) 45
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-55
Weight g0.3
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
20 A
per terminal
150-55
DSA10IM100UC
DSA15IM150UC
TO-252AA (DPak)
TO-252AA (DPak)
100
150
TO-252 (DPak)
Similar Part Package Voltage class
DSB15IM30UC TO-252AA (DPak) 30
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
DSA15IM200UC 510408Tape & Reel 2500SFMAUIStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.53
mΩ
V
0 max
R
0 max
slope resistance *
7.6
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20170927dData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA15IM200UC
4
1
3
Outlines TO-252 (DPak)
IXYS reserves the right to change limits, conditions and dimensions. 20170927dData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA15IM200UC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
6
12
18
24
30
0 40 80 120 160
0.001
0.01
0.1
1
10
1
00
0 4 8 12 16 20
0
2
4
6
8
10
12
14
16
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0 40 80 120 160 200
0
4
8
12
16
20
24
I
F(AV)
[A]
T
C
[°C]
t[s]
0 50 100 150 200
0
50
100
150
200
250
C
T
[pF]
I
R
[mA]
I
F
[A]
V
F
[V] V
R
[V] V
R
[V]
Z
thJC
[K/W]
DC
d = 0.5
I
F(AV)
[A]
P
(AV)
[W]
T
VJ
=
150°C
125°C
25°C
75°C
100°C
125°C T
VJ
= 25°C
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Avg: forward current I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
50°C
25°C
150°C
T
VJ
= 175°C
d =
DC
0.5
0.33
0.25
0.17
0.08
i R
thi
(K/W) t
i
(s)
1 0.200 0.0200
2 0.300 0.0001
3 0.500 0.0035
4 0.400 0.0950
5 0.600 0.1100
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20170927dData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
