FDS6912A ee FAIRCHILD SEMICONDUCTOR Im FDS6912A June 1998 Dual N-Channel, Logic Level, PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. in i * Features 6A, 30V. Ragin = 0.028. @ Veg = 10V Rogom = 0-035 Q @ Vag = 4.5 V. = Fast switching speed. a Low gate charge (typical 9 nC). 8 High performance trench technology for extremely low R DS(ON)" High power and current handling capability. Absolute Maximum Ratings T, = 25C unless other wise noted Symbol | Parameter FDS6912A Units Voss Drain-Source Voltage 30 Vows Gate-Source Voltage +20 l, Drain Current - Continuous (Note ta) 6 A - Pulsed 20 P, Power Dissipation for Single Operation _(note ta) 2 Ww (Note 1b) 16 (Note 1c) 0.9 Ti Tet Operating and Storage Temperature Range -55 to 150 c THERMAL CHARACTERISTICS Rasa "| Thermal Resistance, Junction-to-Ambient oe 1a 78 SCAN Pac Thermal Resistance, Junction-to-Case ole 1) 40 C 2-66 FDS6912A Aev.C Electrical Characteristics (T, = 25C unless otherwise noted ) Q be : mize a. 78CMW on a 0.5 in? a 5b, 125CAW on a 0.02 in? pad of 20z copper. x Ne pad of 202 copper. O Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%, Symbol | Parameter Conditions | Min | Typ Max | Units OFF CHARACTERISTICS BV oss Drain-Source Breakdown Voltage Veg = OV, 1)= 250 WA 30 Vv ABV, </AT, Breakdown Voltage Temp. Coefficient |, = 250 pA, Referenced to 25C 23 mV C loss Zero Gate Voltage Drain Current Vog = 24V, Veg= OV 1 pA T, = 55C 10 yA logge Gate - Body Leakage, Forward Veg = 20V,V,,= OV 100 nA lesa Gate - Body Leakage, Reverse Veg = -20-V, Vag= OV -100 nA ON CHARACTERISTICS | wote2) Veseny Gate Threshold Voltage Vog = Veg: Ip = 250 pA 1 15 3 Vv NegnfAT, Gate Threshold Voltage Temp. Coefficient i,= 250 pA, Referenced to 25C -4 mV /C Roscony Static Drain-Source On-Resistance Veg=10V,1,=6A 0.023 | 0.028 Q T, =126C 0.036 | 0.044 Veg =4.5V, 1, =5A 0.029 | 0.035 levcas [On-State Drain Current Veg = 10V, Vog=5V 20 i A Oe | Forward Transconductance Vig= 15 V, 1,=6A 13 | s DYNAMIC CHARACTERISTICS Cy Input Capacitance Vag = 15 V, Vag = OV, 830 pF C... Output Capacitance f = 1.0MHz 185 pF Cy Reverse Transfer Capacitance 800 | pF SWITCHING CHARACTERISTICS qote2 toon Tum - On Delay Time Vogt 15V, [p= tA 6 12 ns t Tum - On Rise Time Veg = 10V, Rog = 62 10 18 ns toon Tum - Off Delay Time 18 29 ns t Turn - Off Fall Time 5 12 ns Q, Total Gate Charge Vg = 15 V, 1,=7.5A, 9 13 nc Q,. Gate-Source Charge Vog= 5 V 2.8 nc Qu Gate-Drain Charge T 3.1 | nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS ly [Maximum Continuous Drain-Source Diode Forward Current [. 1.3 A Veo | Drain-Source Diode Forward Votage Veg = OV, |= 1.3A water) o73 | 12 v Notes: 1. A,, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. A,,,..is guaranteed by design while A, is determined by the user's board design. c. 135C/W on a 0.0083 in? pad of 2oz copper. 2-67 FDS6912A Rev.C vcel69Sdd FDS6912A Typical Electrical Characteristics Rpsion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE Ip, DRAIN CURRENT (A) Ip, DRAIN-SOURCE CURRENT (A) 32 24 16 8 2.6V 9 O 1 2 3 4 Vpg ORAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 16 TT To Td - Ip= 6A 14 [ | 10V _ 12} t - j | | | os a aL 50 25 9 25 50 75 100 125 150 T, , JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 25 Vps =5.0V Ty = 65C Tf 5C 205 125C 4 15 F _ = rr [ fA 4 ZZ | 1 2 3 4 5 Ves. GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Fipg(ony. NORMALIZED R pggon) ON-RESISTANCE (OHM) Ig, REVERSE DRAIN CURRENT (A) TT wy 2 [ z Vgg= 2.5V / m4 - n ! z zi 5 3.0V | Ww 3 , 4 2 2 35V | G | | 45V + 51 10V c : : | a | i 0 6 12 18 24 30 Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 1 re Ip = 3A 0.12 + 0.09 _ t 4 0.06 _ Sa Ty = 125C 0.03 of i LL 25C | o pe i ee 0 2 4 6 8 10 Vag . GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Ty= 125C 0 0.2 04 06 08 1 12 14 V gp BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2-68 FDS6912A Rev.C Typical Electrical Characteristics = G BI g ~ c go 5 | 9 is x 3 5 8 4 & 100 a oO & gy 50 [7 f= 1 MHz oo Ves=0V > ' | i]t 0 _ : a lL pee LL _ 0.4 02 05 1 2 5 10 30 0 3 6 9 12 15 18 Vpg. DRAIN TO SOURCE VOLTAGE (V) Qg . GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 rye ee 50 =} SINGLE PULSE | <= i ug Raa =135CAV | 10 Exe 7, Ta = 25C | Zz To = i & 70m, 2 5 : & | 3 as = | Zz Ts o iy = ao 2S sy Vgg =10V il jc SINGLE PULSE Toi ~ 905 Rqia= 135C 1 Tt Ty = 25C : an O01 tet o4 05 1 2 5 10 30. 50 Vpg . DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 0.01 = 0.005 *- TRANSIENT THERMAL RESISTANCE =F 10 50 100 300 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Rosa () = ri) * Rasa b 4 Ty-Ty =P Rylan 4 Duty Cycle, D=t, /, - Ww > 22 o2 8 ot Rasa =135 CW Fs t | ~~ r | 0.05 = g r | Zz 00e 0.01 ee tye: _ 3 ey | oc S Z 0.002 - _ ine 1 bie 0.0001 0.001 0.01 1 10 100 300 vel69Sd4 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Therma! characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. 2-69 FOS6912A Rev.C