SMD Schottky Barrier Diode CDBQR0130R I o = 100 mA V R = 30 Volts RoHS Device 0402/SOD-923F Features 0.041(1.05) 0.037(0.95) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55) -Majority carrier conduction. Mechanical data -Case: 0402/SOD-923F standard package, molded plastic. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BQ -Mounting position: Any. 0.020(0.50) Typ. -Weight: 0.001 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Repetitive peak reverse voltage V RRM 35 V Reverse voltage VR 30 V Average forward current IO 100 mA I FSM 1 A Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 10 mA VF 0.45 V Reverse current V R = 10 V IR 0.5 uA REV:B Page 1 QW-A1127 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR0130R) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 O Reverse current ( A ) 100 C 5 O C 10 1u O 25 C 100n C O C 75 C O 25 O 10u O -25 C 10n -25 75 1 O 12 Forward current (mA ) 125 C 100u 0.1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 0 10 Fig. 3 - Capacitance between terminals characteristics 25 30 Fig.4 - Current derating curve 100 f = 1 MHz Ta = 25 C Average forward current(%) 10 100 80 60 40 20 0 1 0 5 10 15 20 25 30 0 Fig. 6 - IR Dispersion map 330 AVG:335mV 320 310 100 125 O 800 700 600 500 400 300 Fig. 7 - CT Dispersion map O Ta=25 C VR=10V n=30pcs 900 Reverse current (nA) 340 75 50 1000 O Ta=25 C IF=10mA n=30pcs 350 50 Ambient temperature ( C) Fig. 5 - VF Dispersion map 360 25 O Reverse voltage (V) AVG:111nA 200 Ta=25 C F=1MHz VR=0V n=10pcs 45 Capacitance between terminals(pF) Capacitance between terminals ( P F) 20 Reverse voltage (V) Forward voltage (V) Forward voltage (mV) 15 40 35 30 25 20 15 AVG:18.8pF 10 100 5 0 0 REV:B Page 2 QW-A1127 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed 0402 (SOD-923F) 0402 (SOD-923F) SYMBOL A B C d D D1 D2 (mm) 0.75 0.10 1.15 0.10 0.60 0.10 1.55 + 0.10 178 1 60.0 MIN. 13.0 0.20 (inch) 0.026 0.004 0.045 0.004 0.024 0.004 0.061 + 0.004 7.008 0.04 2.362 MIN. 0.512 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 0.10 3.50 0.05 4.00 0.10 4.00 0.10 2.00 0.10 0.22 0.05 8.00 0.20 13.5 MAX. (inch) 0.069 0.004 0.138 0.002 0.157 0.004 0.157 0.004 0.079 0.004 0.009 0.002 0.315 0.008 0.531 MAX. REV:B Page 3 QW-A1127 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Part Number Marking Code CDBQR0130R BQ BQ Suggested PAD Layout 0402/SOD-923F SIZE (mm) (inch) A 0.750 0.030 B 0.500 0.020 C 0.700 0.028 D 1.250 0.049 E 0.250 0.010 D A E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) 5000 7 Case Type 0402/SOD-923F REV:B Page 4 QW-A1127 Comchip Technology CO., LTD.