CDBQR0130R
Page 1
QW-A1127
REV:B
Comchip Technology CO., LTD.
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
O
Maximum Rating (at TA=25 C unless otherwise noted)
uA
V
0.5
0.45
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 10 mA
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
SMD Schottky Barrier Diode
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BQ
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Io = 100 mA
VR = 30 Volts
RoHS Device
0402/SOD-923F
RATING AND CHARACTERISTIC CURVES (CDBQR0130R)
Page 2
QW-A1127
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Comchip Technology CO., LTD.
340
310
350
330
360
320
AVG:3 35mV
O
Ta=25 C
IF=10mA
n=30pcs
Fig. 5 - VF Dispersion map
600
0
800
400
1000
200
100
300
500
700
900
Fig. 6 - IR Dispersion map
30
0
40
20
50
10
5
15
25
35
45
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
AVG:111nA AVG:18.8pF
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
Forward voltage (mV)
Reverse current (nA)
Capacitance between
terminals(pF)
Capacitance between terminals (PF)
Reverse voltage (V)
Forward current (mA )
0.2 0.40
1
100
0.5
0.1
0.8
Forward voltage (V)
Fig. 1 - Forward characteristics
Reverse current ( A )
Reverse voltage (V)
1u
1n
10u
100n
0 10 20 25 30
Fig. 2 - Reverse characteristics
0
20
40
60
80
100
0 25 50 75 100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
1000
Fig. 3 - Capacitance between
terminals characteristics
0.6
0.3
0.1
1m
0.7
10
0 1510 20
1
10
100
525 30
O
-25C
O
25 C
O
75 C
O
125 C
100u
15
5
10n
O
25 C
O
-25 C
O
75 C
O
125 C
f = 1 MHz
Ta = 25 C
SMD Schottky Barrier Diode
Page 3
QW-A1127
REV:B
Comchip Technology CO., LTD.
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.026 0.004±0.045 0.004±0.024 0.004±0.061 + 0.004 7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
0.75 0.10± 1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05± 8.00 0.20± 13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Polarity
Page 4
QW-A1127
REV:B
Comchip Technology CO., LTD.
BQ
Part Number
CDBQR0130R
Marking Code
BQ
Marking Code
Suggested PAD Layout
SIZE
(inch)
0.030
(mm)
0.750
0.500
0.700
0.020
0.028
1.250 0.049
E0.250 0.010
Standard Package
A
B
C
D
A
C
B
E
D
Case Type
Qty per Reel
(Pcs)
5000
0402/SOD-923F
Reel Size
(inch)
7
0402/SOD-923F
SMD Schottky Barrier Diode
