MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free- wheeling diodes, and polarity-protection diodes. * * * * 1N5826 and 1N5828 are Motorola Preferred Devices Extremely Low vF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction High Surge Capacity SCHOTTKY BARRIER RECTIFIERS 15 AMPERES 20, 30, 40 VOLTS Mechanical Characteristics: * Case: Welded steel, hermetically sealed * Weight: 45.6 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable * Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal which transmits heat away from the die requires that caution be used when attaching wires. Motorola suggests a heat sink be clamped between the eyelet and the body during any soldering operation. * Stud Torque: 15 lb-in max * Shipped 25 units per rail * Marking: 1N5826, 1N5827, 1N5828 CASE 56-03 DO-203AA METAL MAXIMUM RATINGS Rating Symbol 1N5826 1N5827 1N5828 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 Volts Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 Volts Average Rectified Forward Current VR(equiv) 0.2 VR(dc), TC = 85C v IO Ambient Temperature Rated VR(dc), PF(AV) = 0, RJA = 5.0C/W TA Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Amp 15 95 90 85 C IFSM 500 (for one cycle) Amp TJ, Tstg *65 to +125 C TJ(pk) 150 C *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.5 C/W * Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 1 Rectifier Device Data Motorola, Inc. 1996 1 1N5826 1N5827 1N5828 *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Maximum Instantaneous Forward Voltage (1) (iF = 8.0 Amps) (iF = 15 Amps) (iF = 47.1 Amps) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) TC = 100C iR 1N5826 1N5827 1N5828 0.380 0.440 0.670 0.400 0.470 0.770 0.420 0.500 0.870 10 75 10 75 10 75 Unit Volts mA * Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. NOTE 1 -- DETERMINING MAXIMUM RATINGS difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, i.e.: Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.2 VRWM. Proper derating may be accomplished by use of equation (1): * * TA(max) = TJ(max) RJA PF(AV) RJA PR(AV) (1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2): TR = TJ(max) * RJA PR(AV) VR(equiv) = Vin(PK) Step 1. Find VR(equiv). Read F = 0.65 from Table 1, VR(equiv) = (1.41) (10) (0.65) = 9.18 V. Step 2. Find TR from Figure 3. Read TR = 121C @ VR = 9.18 V and RJA = 5C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 10 W N (2) * RJA PF(AV) (4) The Factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5828 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 10 A (IF(AV) = 5 A), I(PK)/I(AV) = 20, Input Voltage = 10 V(rms), RJA = 5C/W. Substituting equation (2) into equation (1) yields: TA(max) = TR F @ (3) I (PK) I (AV) + 20 and IF(AV) + 5 A Step 4. Find TA(max) from equation (3). TA(max) = 121 (5) (10) = 71C. **Values given are for the 1N5828. Power is slightly lower for the other units because of their lower forward voltage. @ Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a Table 1. Values for Factor F Circuit Full Wave, Bridge Full Wave, Center Tapped* Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 0.75 1.5 0.75 0.75 1.5 1.5 Square Wave *Note that VR(PK) 2 Half Wave [ 2.0 Vin(PK). *Use line to center tap voltage for Vin. Rectifier Device Data 1N5826 1N5827 1N5828 125 2.5 5.0 115 7.0 105 10 15 95 20 30 85 75 Rq JA (C/W) = 50* 2.0 3.0 4.0 5.0 7.0 10 VR REVERSE VOLTAGE (VOLTS) 15 3.5 5.0 115 7.0 105 10 15 95 20 30 85 Rq JA (C/W) = 50* 75 4.0 5.0 7.0 10 15 20 VR REVERSE VOLTAGE (VOLTS) 30 40 Figure 3. Maximum Reference Temperature - 1N5828 5.0 7.0 105 10 15 95 20 30 85 Rq JA (C/W) = 50* 4.0 5.0 7.0 10 15 VR REVERSE VOLTAGE (VOLTS) 20 30 Figure 2. Maximum Reference Temperature - 1N5827 PF(AV), AVERAGE POWER DISSIPATION (WATTS) TR , REVERSE TEMPERATURE ( _C) 2.5 3.5 115 75 3.0 20 Figure 1. Maximum Reference Temperature - 1N5826 125 2.5 3.5 TR , REVERSE TEMPERATURE ( _ C) TR , REVERSE TEMPERATURE ( _ C) 125 16 TJ 14 12 [ 125C SINEWAVE CAPACITIVE LOADS 10 8.0 I(PK) = 20 I(AV) 6.0 4.0 SQUARE WAVE 10 5.0 dc SINE WAVE RESISTIVE LOAD 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (AMP) 16 Figure 4. Forward Power Dissipation * NO EXTERNAL HEAT SINK Rectifier Device Data 3 1N5826 1N5827 1N5828 IFSM, PEAK HALF-WAVE CURRENT (AMP) 200 TJ = 25C 100 70 100C 50 20 Prior to surge, the rectifier is operated such that TJ = 100C; VRRM may be applied between each cycle of surge. f = 60 Hz 700 500 300 200 100 1.0 10 5.0 20 NUMBER OF CYCLES 2.0 10 100 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 16 Square Wave 14 p 12 Sine Wave Resistive Load DC Continuous Max IDC = 23.4 A 10 8.0 5.0 6.0 10 SineWave I(PK) = 20 Capacitive Loads I(AV) 4.0 2.0 Curves apply when reverse power is negligible 0 75 1.4 95 85 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 105 115 125 TC, CASE TEMPERATURE (C) Figure 5. Typical Forward Voltage r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 50 Figure 6. Maximum Surge Capability 7.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 30 1000 Figure 7. Current Derating 1.0 0.7 0.5 0.3 ZJC(t) = RJC @ r(t) 0.2 tp 0.1 P(pk) 0.07 0.05 t1 DTJC = P(pk) @ RJC [D = (1-D) @ r(t1 + tp) + r(tp) - r(t1)] where DTJC = the increase in junction temperature above the case temperature 0.03 0.02 0.01 0.05 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. r(t) = normalized value of transient thermal resistance at time, t, from Figure 8, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k t, TIME (ms) Figure 8. Thermal Response 4 Rectifier Device Data 1N5826 1N5827 1N5828 200 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 TJ = 125C 100 VR = VRWM 3.0 2.0 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (NORMALIZED) 5.0 50 100C 20 10 75C 5 2 25C 1 1N5826 - 20 V 1N5827 - 30 V 1N5828 - 40 V 0.5 0.2 25 45 65 85 105 TC, CASE TEMPERATURE (C) 125 0 4.0 8.0 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) 36 40 Figure 10. Typical Reverse Current Figure 9. Normalized Reverse Current 2500 NOTE 2 -- HIGH FREQUENCY OPERATION 2000 C, CAPACITANCE (pF) TJ = 25C 1500 1000 700 1N5826 500 1N5827 400 300 250 0.04 0.06 0.1 1N5828 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 11.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 per cent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. Figure 11. Capacitance Rectifier Device Data 5 1N5826 1N5827 1N5828 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. B D DIM A B C D E F J K P Q R R Q P 1 K E C SEATING PLANE F 10 32UNF-2A INCHES MIN MAX --- 0.505 0.424 0.437 --- 0.405 --- 0.250 0.060 --- 0.075 0.175 0.422 0.453 0.600 0.800 0.163 0.189 0.060 0.095 0.265 0.424 MILLIMETERS MIN MAX --- 12.82 10.77 11.09 --- 10.28 --- 6.35 1.53 --- 1.91 4.44 10.72 11.50 15.24 20.32 4.14 4.80 1.53 2.41 6.74 10.76 J 2 CASE 56-03 ISSUE G Motorola reserves the right to make changes without further notice to any products herein. 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