1N5828 - ON Semiconductor

1Rectifier Device Data

Designer's



Data Sheet

Power Rectifiers

. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features chrome barrier metal,

epitaxial construction with oxide passivation and metal overlap contact. Ideally

suited for use as rectifiers in low–voltage, high–frequency inverters, free–

wheeling diodes, and polarity–protection diodes.

•Extremely Low vF

•Low Power Loss/High Efficiency

•Low Stored Charge, Majority Carrier Conduction

•High Surge Capacity

Mechanical Characteristics:

•Case: Welded steel, hermetically sealed

•Weight: 45.6 grams (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal Lead is

Readily Solderable

•Solder Heat: The excellent heat transfer property of the heavy duty copper

anode terminal which transmits heat away from the die requires that cau-

tion be used when attaching wires. Motorola suggests a heat sink be

clamped between the eyelet and the body during any soldering operation.

•Stud Torque: 15 lb–in max

•Shipped 25 units per rail

•Marking: 1N5826, 1N5827, 1N5828

MAXIMUM RATINGS

Rating Symbol 1N5826 1N5827 1N5828 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

20 30 40 Volts

Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 Volts

Average Rectified Forward Current

VR(equiv)

0.2 VR(dc), TC = 85°CIO15 Amp

Ambient Temperature

Rated VR(dc), PF(AV) = 0,

RθJA = 5.0°C/W

TA95 90 85 °C

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz)

IFSM 500 (for one cycle) Amp

Operating and Storage Junction Temperature Range

(Reverse Voltage applied) TJ, Tstg

65 to +125 °C

Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C

*THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 2.5 °C/W

*Indicates JEDEC Registered Data

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1996

Order this document

by 1N5826/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

1N5826

1N5827

1N5828

SCHOTTKY BARRIER

RECTIFIERS

15 AMPERES

20, 30, 40 VOLTS

CASE 56–03

DO–203AA

METAL

1N5826 and 1N5828 are

Motorola Preferred Devices

Rev 1

1N5826 1N5827 1N5828

2Rectifier Device Data

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol 1N5826 1N5827 1N5828 Unit

Maximum Instantaneous Forward Voltage (1)

(iF = 8.0 Amps)

(iF = 15 Amps)

(iF = 47.1 Amps)

vF0.380

0.440

0.670

0.400

0.470

0.770

0.420

0.500

0.870

Volts

Maximum Instantaneous Reverse

Current @ Rated dc Voltage (1)

TC = 100°C

iR10

75 10

*Indicates JEDEC Registered Data

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

NOTE 1 — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal runaway

must be considered when operating this rectifier at reverse voltages

above 0.2 VRWM. Proper derating may be accomplished by use of

equation (1):

TA(max) = TJ(max)

RθJA PF(AV)

RθJA PR(AV) (1)

where TA(max) = Maximum allowable ambient temperature

TJ(max) = Maximum allowable junction temperature

(125°C or the temperature at which thermal

runaway occurs, whichever is lowest)

PF(AV) = Average forward power dissipation

PR(AV) = A verage reverse power dissipation

RθJA = Junction–to–ambient thermal resistance

Figures 1, 2, and 3 permit easier use of equation (1) by taking

reverse power dissipation and thermal runaway into consideration.

The figures solve for a reference temperature as determined by

equation (2): TR = TJ(max)

RθJA PR(AV) (2)

Substituting equation (2) into equation (1) yields:

TA(max) = TR

RθJA PF(AV) (3)

Inspection of equations (2) and (3) reveals that TR is the ambient

temperature at which thermal runaway occurs or where TJ = 125°C,

when forward power is zero. The transition from one boundary condi-

tion to the other is evident on the curves of Figures 1, 2, and 3 as a

difference in the rate of change of the slope in the vicinity of 115°C.

The data of Figures 1, 2, and 3 is based upon dc conditions. For use

in common rectifier circuits, Table 1 indicates suggested factors for

an equivalent dc voltage to use for conservative design, i.e.:

VR(equiv) = Vin(PK)

F (4)

The Factor F is derived by considering the properties of the various

rectifier circuits and the reverse characteristics of Schottky diodes.

EXAMPLE: Find T A(max) for 1N5828 operated in a 12–volt dc sup-

ply using a bridge circuit with capacitive filter such that IDC = 10 A

(IF(AV) = 5 A), I(PK)/I(AV) = 20, Input Voltage = 10 V(rms), RθJA =

5°C/W.

Step 1. Find VR(equiv). Read F = 0.65 from Table 1,

VR(equiv) = (1.41) (10) (0.65) = 9.18 V.

Step 2. Find TR from Figure 3. Read TR = 121°C

@ VR = 9.18 V and RθJA = 5°C/W.

Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 10 W

@I(PK)

I(AV)

20and IF(AV)

Step 4. Find TA(max) from equation (3).

TA(max) = 121

(5) (10) = 71°C.

**Values given are for the 1N5828. Power is slightly lower for the

other units because of their lower forward voltage.

Table 1. Values for Factor F

Circuit Half W ave Full W ave, Bridge Full W ave,

Center Tapped*†

Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive

Sine W ave 0.5 1.3 0.5 0.65 1.0 1.3

Square W ave 0.75 1.5 0.75 0.75 1.5 1.5

*Note that VR(PK)

[

2.0 Vin(PK). *†Use line to center tap voltage for Vin.

1N5826 1N5827 1N5828

3Rectifier Device Data

Figure 1. Maximum Reference Temperature – 1N5826

VR REVERSE VOLT AGE (VOLTS)

2.0 4.03.0 7.05.0 201510

105

115

125

JA (°C/W) = 50*

30 20

7.0

5.0

3.5

2.5

T , REVERSE TEMPERATURE ( C)

7.0

5.0

3.5

2.5

Figure 2. Maximum Reference Temperature – 1N5827

VR REVERSE VOLT AGE (VOLTS)

T , REVERSE TEMPERATURE ( C)

304.03.0 7.05.0 201510

105

115

125

JA (°C/W) = 50*

304.0 407.05.0 201510

105

115

125

T , REVERSE TEMPERATURE ( C)

Figure 3. Maximum Reference Temperature – 1N5828 Figure 4. Forward Power Dissipation

VR REVERSE VOLT AGE (VOLTS)

P , A VERAGE POWER DISSIPATION (WATTS)

F(AV)

0 2.0 4.0 6.0 8.0 10 12 14 16

IF(AV), AVERAGE FOR W ARD CURRENT (AMP)

2.0

4.0

6.0

8.0

[

125°C

SQUARE

WAVE

SINEWAVE

CAPACITIVE

LOADS

30 20 15

JA (°C/W) = 50*

30 20

7.0

5.0

3.5

2.5

= 20

I(PK)

I(AV) 5.010

SINE WAVE

RESISTIVE LOAD

* NO EXTERNAL HEAT SINK

1N5826 1N5827 1N5828

4Rectifier Device Data

Figure 5. Typical Forward Voltage

vF, INSTANT ANEOUS FORWARD VOLT AGE (VOLTS)

0.2 0.80.6 1.0

200

0.3

0.2

2.0

1.0

100

7.0

3.0

0.5

5.0

, INSTANTANEOUS FORWARD CURRENT (AMPS)

0.7

1.20 1.4

100°C

TJ = 25°C

0.4

Figure 6. Maximum Surge Capability

Figure 7. Current Derating

Figure 8. Thermal Response

1000

100

200

10 100

NUMBER OF CYCLES

300

500

700

1.0 2.0 5.0 20 50

Prior to surge, the rectifier is operated such

that TJ = 100°C; VRRM may be applied be-

tween each cycle of surge.

f = 60 Hz

IFSM, PEAK HALF–WAVE CURRENT (AMP)

0.01

0.02

0.05

0.1

0.2

0.5

1.0

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

t, TIME (ms)

ZθJC(t) = RθJC

r(t)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

200 500 1.0 k 2.0 k 5.0 k

0.03

0.07

0.3

0.7

P(pk)

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak of an

equivalent square power pulse.

TJC = the increase in junction temperature above the case temperature

r(t) = normalized value of transient thermal resistance at time, t, from Figure 8, i.e.:

r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.

TJC = P(pk)

RθJC [D = (1–D)

r(t1 + tp) + r(tp) – r(t1)] where

TC, CASE TEMPERATURE (°C)

75 85

4.0

2.0

6.0

8.0

12595 105

, A VERAGE FORWARD CURRENT (AMPS)

F(AV)

115

5.0

SineWave = 20

I(PK)

I(AV)

Capacitive Loads

Curves apply when reverse power is negligible

Square

Wave Sine Wave

Resistive Load

DC Continuous

Max IDC = 23.4 A

1N5826 1N5827 1N5828

5Rectifier Device Data

VR, REVERSE VOLT AGE (VOLTS)

0128.0 20 24

200

100 TJ = 125°C

4.0 16 40

Figure 9. Normalized Reverse Current

32 3628

0.5

0.2

, REVERSE CURRENT (mA)

100°C

25°C

Figure 10. Typical Reverse Current

2500

250

500

700

VR, REVERSE VOLT AGE (VOLTS)

Figure 11. Capacitance

C, CAPACIT ANCE (pF)

1000

1500

2000 TJ = 25°C

5.0

0.05

0.2

85 125

0.7

1.0

3.0

25 45 65 105

VR = VRWM

75°C

1N5826 – 20 V

1N5827 – 30 V

1N5828 – 40 V

300

400

1N5826

1N5827

1N5828

0.1 2.00.6 1.0 4.00.04 400.40.06 0.2 6.0 10 20

IR, REVERSE CURRENT (NORMALIZED)

TC, CASE TEMPERATURE (°C)

2.0

0.3

0.5

0.1

0.07

NOTE 2 — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of majority

carrier conduction, it is not subject to junction diode forward and

reverse recovery transients due to minority carrier injection and

stored charge. Satisfactory circuit analysis work may be performed

by using a model consisting of an ideal diode in parallel with a

variable capacitance. (See Figure 11.)

Rectification efficiency measurements show that operation will

be satisfactory up to several megahertz. For example, relative

waveform rectification efficiency is approximately 70 per cent at

2.0 MHz, e.g., the ratio of dc power to RMS power in the load is

0.28 at this frequency, whereas perfect rectification would yield

0.406 for sine wave inputs. However, in contrast to ordinary

junction diodes, the loss in waveform efficiency is not indicative of

power loss; it is simply a result of reverse current flow through the

diode capacitance, which lowers the dc output voltage.

1N5826 1N5827 1N5828

6Rectifier Device Data

PACKAGE DIMENSIONS

CASE 56–03

ISSUE G

10 32UNF–2A 2

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A––– 0.505 ––– 12.82

B0.424 0.437 10.77 11.09

C––– 0.405 ––– 10.28

D––– 0.250 ––– 6.35

E0.060 ––– 1.53 –––

F0.075 0.175 1.91 4.44

J0.422 0.453 10.72 11.50

K0.600 0.800 15.24 20.32

P0.163 0.189 4.14 4.80

Q0.060 0.095 1.53 2.41

R0.265 0.424 6.74 10.76

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