PD - 94741 IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features * * * * * Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150C. IC = 30A, TC=100C G tsc > 10s, TJ=150C E n-channel VCE(on) typ. = 1.95V Benefits * Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation. D2 Pak IRGS30B60K TO-262 IRGSL30B60K Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25C Continuous Collector Current 60 IC @ TC = 100C Continuous Collector Current 30 ICM 120 ILM Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 VGE Gate-to-Emitter Voltage 20 PD @ TC = 25C Maximum Power Dissipation 304 PD @ TC = 100C Maximum Power Dissipation 122 c TJ Operating Junction and TSTG Storage Temperature Range A 120 V W -55 to +150 C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal / Mechanical Characteristics Min. Typ. Max. Units RJC Junction-to-Case- IGBT Parameter --- --- 0.41 C/W RCS Case-to-Sink, flat, greased surface --- 0.50 --- RJA Junction-to-Ambient (PCB Mount, Steady State) --- --- 40 Wt Weight --- 1.44 --- www.irf.com d g 1 07/31/03 IRGS/SL30B60K Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)CES/TJ VCE(on) Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Voltage VGE(th) VGE(th)/TJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. Typ. Max. Units 600 -- -- -- 3.5 -- -- -- -- -- -- 0.40 1.95 2.40 4.5 -10 18 5.0 1000 -- Conditions Ref.Fig. -- V VGE = 0V, IC = 500A -- V/C VGE = 0V, IC = 1mA (25C-150C) IC = 30A, VGE = 15V, TJ = 25C 2.35 2.75 V IC = 30A, VGE = 15V, TJ = 150C 5.5 V VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1.0mA (25C-150C) -- S VCE = 50V, IC = 50A, PW = 80s 250 A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C 2000 100 nA VGE = 20V, VCE = 0V 5,6,7 8,9,10 8,9,10 11 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (Peak) Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Min. Typ. Max. Units -- 102 153 -- 14 21 -- 44 66 -- 350 620 -- 825 955 -- 1175 1575 -- 46 60 -- 28 39 -- 185 200 -- 31 40 -- 635 1085 -- 1150 1350 -- 1785 2435 -- 46 60 -- 28 39 -- 205 235 -- 32 42 -- 7.5 -- -- 1750 -- -- 160 -- -- 60 -- FULL SQUARE 10 -- -- 200 -- -- nC J ns J ns Conditions Ref.Fig. IC = 30A VCC = 400V VGE = 15V IC = 30A, VCC = 400V VGE = 15V, RG = 10, L = 200H TJ = 25C IC = 30A, VCC = 400V VGE = 15V, RG = 10, L = 200H TJ = 25C 17 CT1 CT4 e IC = 30A, VCC = 400V VGE = 15V, RG = 10, L = 200H TJ = 150C IC = 30A, VCC = 400V VGE = 15V, RG = 10, L = 200H TJ = 150C e CT4 CT4 12,14 WF1,WF2 CT4 WF1 WF2 nH pF s Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150C, IC = 120A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG =10 TJ = 150C, Vp = 600V, RG = 10 VCC=360V,VGE = +15V to 0V A 16 4 CT2 CT3 WF3 WF3 Note to are on page 12 2 13,15 www.irf.com IRGS/SL30B60K 350 80 300 250 Ptot (W) IC (A) 60 40 200 150 100 20 50 0 0 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 T C (C) T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 100 IC A) IC (A) 10 s 10 100 s 10 1ms 1 DC 0.1 1 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25C; TJ 150C www.irf.com 10000 10 100 1000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V 3 IRGS/SL30B60K 60 50 VGE = 18V VGE = 15V 40 VGE = 12V VGE = 10V VGE = 8.0V ICE (A) ICE (A) 60 30 50 VGE = 18V VGE = 15V 40 VGE = 12V VGE = 10V VGE = 8.0V 30 20 20 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s ICE (A) 60 50 VGE = 18V VGE = 15V 40 VGE = 12V VGE = 10V VGE = 8.0V 30 20 10 0 0 1 2 3 4 5 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s 4 www.irf.com 20 20 18 18 16 16 14 14 12 ICE = 15A 10 ICE = 30A 8 ICE = 60A VCE (V) VCE (V) IRGS/SL30B60K 12 ICE = 15A 10 ICE = 30A 8 ICE = 60A 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 8 - Typical VCE vs. VGE TJ = -40C Fig. 9 - Typical VCE vs. VGE TJ = 25C 250 20 18 T J = 25C T J = 150C 200 16 12 10 ICE = 15A ICE = 30A 8 ICE = 60A ICE (A) VCE (V) 14 150 100 6 T J = 150C 50 4 T J = 25C 2 0 0 5 10 15 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 150C www.irf.com 20 0 5 10 15 20 VGE (V) Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 5 IRGS/SL30B60K 3000 1000 Swiching Time (ns) 2500 Energy (J) 2000 EOFF 1500 EON 1000 tdOFF 100 td ON tF 500 tR 0 0 20 40 60 10 80 0 20 40 IC (A) 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V, RG= 10; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150C; L=200H; VCE= 400V RG= 10; VGE= 15V 10000 3000 Swiching Time (ns) 2500 Energy (J) 2000 EOFF EON 1500 1000 1000 tdOFF 100 tdON tF 500 tR 10 0 0 25 50 75 100 RG () Fig. 14 - Typ. Energy Loss vs. RG TJ = 150C; L=200H; VCE= 400V ICE= 30A; VGE= 15V 6 125 0 25 50 75 100 125 RG () Fig. 15 - Typ. Switching Time vs. RG TJ = 150C; L=200H; VCE= 400V ICE= 30A; VGE= 15V www.irf.com IRGS/SL30B60K 16 10000 14 200V Cies 400V 1000 10 VGE (V) Capacitance (pF) 12 8 6 Coes 100 4 2 Cres 0 10 0 20 40 60 80 0 100 25 50 75 100 125 Q G, Total Gate Charge (nC) VCE (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE ICE = 30A; L = 600H Thermal Response ( Z thJC ) 10 1 0.1 0.01 D = 0.50 0.20 0.10 J 0.05 0.02 0.01 R1 R1 J 1 R2 R2 C 1 2 2 Ri (C/W) i (sec) 0.200 0.000428 0.209 0.013031 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRGS/SL30B60K L L VCC DUT 80 V + - 0 DUT 480V Rg 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT Driver L - 5V 360V DC DUT / DRIVER DUT VCC Rg Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRGS/SL30B60K 700 600 35 700 70 30 600 60 25 500 90% ICE tf 300 15 5% V CE 5% ICE 100 0 400 40 300 30 90% test current 10 200 5 100 0 0 tr 10% test current 5% V CE 0.20 10 0 0.40 0.60 -5 0.80 -100 15.90 16.00 Time(s) 16.10 16.20 -10 16.30 Time (s) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4 600 300 500 250 ICE 400 200 VCE (V) VCE 300 150 200 100 100 50 0 -5.00 0.00 5.00 10.00 ICE (A) 0.00 20 Eon Loss Eoff Loss -100 -0.20 ICE (A) 20 VCE (V) 400 200 50 TEST CURRENT ICE (A) V CE (V) 500 0 15.00 time (S) Fig. WF3- Typ. S.C Waveform @ TC = 150C using Fig. CT.3 www.irf.com 9 IRGS/SL30B60K D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS SEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com IRGS/SL30B60K TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 11 IRGS/SL30B60K D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: VCC = 80% (VCES), VGE = 15V, L = 28H, RG = 22. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Energy losses include "tail" and diode reverse recovery. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/03 12 www.irf.com