© 2010 IXYS CORPORATION, All Rights Reserved DS99921A(7/10)
PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA4N100P
IXFP4N100P
VDSS = 1000V
ID25 = 4A
RDS(on) ≤≤
≤≤
≤ 3.3ΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXFA)
GDS
TO-220AB (IXFP)
D (Tab)
GS
D (Tab)
Features
zInternational Standard Packages
zLow RDS(on) and QG
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1000 V
VGS(th) VDS = VGS, ID = 250μA 3.0 6.0 V
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V 10 μA
TJ = 125°C 750 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 3.3 Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 4 A
IDM TC= 25°C, Pulse Width Limited by TJM 8 A
IATC= 25°C4 A
EAS TC= 25°C 200 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 Seconds 260 °C
FCMounting Force (TO-263) 10.65 / 2.2..14.6 Nm/lb.in.
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100P
IXFP4N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1 1.8 3.0 S
RGi Gate Input Resistance 1.6 Ω
Ciss 1456 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 90 pF
Crss 16 pF
td(on) 24 ns
tr 36 ns
td(off) 37 ns
tf 50 ns
Qg(on) 26 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9 nC
Qgd 12 nC
RthJC 0.83 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 300 ns
IRM 5.30 A
QRM 0.34 μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXFP) Outline
TO-263 (IXFA) Outline
IF = 2A, VGS = 0V, -di/dt = 100A/μs
VR = 100V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFA4N100P
IXFP4N100P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
0123456789101112
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
7
V
6
V
5
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 2A Valu e vs.
Junction Tem perature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 5. R
DS(on)
Normalized to I
D
= 2A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
012345678
I
D
- A mp ere s
R
DS(on)
- Normali zed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m Dr ai n C u r r ent vs.
Case Temperatu r e
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100P
IXFP4N100P
IXYS REF: F_4N100P(45-744)10-08-08
Fig. 7. Input Adm i ttance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
00.511.522.533.544.55
I
D
- Amper es
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50 0V
I
D
= 2A
I
G
= 10mA
Fi g . 11. C ap aci tan ce
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tran sien t Ther mal I mp ed ance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
