91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
2SA1179N/2SC2812N
Bipolar Transistor
(–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
Miniature package facilitates miniaturization in end products
High breakdown voltage
Speci cations ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)55 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)150 mA
Collector Current (Pulse) ICP (--)300 mA
Base Current IB(--)30 mA
Collector Dissipation PC200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7053-001
Ordering number : EN7198B
Product & Package Information
• Package : CPA
• JEITA, JEDEC : SC-59, TO-236, SOT-23,
TO-236AB
Minimum Packing Quantity
: 3,000 pcs./reel
Packing Type: TB
Marking
TB
1 : Base
2 : Emitter
3 : Collecto
r
CPA
2.93
1.9
0.95
0.45
1.3 MAX
3
12
0.13
0 to 0.1
1.0 1.3
2.4
0.55 0.55
0.2 MIN
M
LOT No.
LOT No.
L
LOT No.
LOT No.
2SC2812N2SA1179N
2SA1179N6-TB-E
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
2SC2812N6-CPA-TB-E
2SA1179N / 2SC2812N
No.7198-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)35V, IE=0A (--)0.1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA
DC Current Gain hFE VCE=(--)6V, IC=(--)1mA 200 400
Gain-Bandwidth Product fT2SC2812N : VCE=6V, IC=1mA 100 MHz
2SA1179N : VCE=--6V, IC=--10mA (180) MHz
Output Capacitance Cob VCB=(--)6V, f=1MHz (4.0)3.0 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
(--0.15)0.1
(--)0.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)50mA, IB=(--)5mA (--)1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)55 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
* : The 2SA1179N / 2SC2812N are classi ed by 1mA hFE as follws :
Rank 6
hFE 200 to 400
Ordering Information
Device Package Shipping memo
2SA1179N6-TB-E CPA 3,000pcs./reel
Pb Free
2SA1179N6-CPA-TB-E CPA 3,000pcs./reel
2SC2812N6-TB-E CPA 3,000pcs./reel
2SC2812N6-CPA-TB-E CPA 3,000pcs./reel
IT04195
0--10 --20 --30 --40 --50
0
--4
--12
--8
--16
0
--80
--40
--120
--200
--160
--240
IT04197
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
IT04196
0 1020304050
0
4
8
16
12
20
IT04198
0 1.0 1.20.6 0.80.40.2
0
120
160
200
240
80
40
IB=0μA
--5μA
--10
μA
--15μA
--20μA
--25μA
--30μA
--35μA
--40μA
--45μA
--50μA
2SA1179N
2SA1179N
VCE= --6V 2SC2812N
VCE=6V
IB=0μA
5μA
10μA
15μA
20μA
25μA
30μA
35
μA
40μA
45μA
50
μA
2SC2812N
Ta=75°C
25°C
--25°C
Ta=75°C
25°C
--25°C
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IC -- VBE
2SA1179N / 2SC2812N
No.7198-3/7
IT04205
--1.0 --10
23 57 --100
23 57 23 5
--0.1
2
7
5
3
2
5
3
IT04203
23 5757 2 3 57
--10 --100--1.0
7
7
5
3
2
2
1.0
10
2SA1179N
f=1MHz
IT04204
23 5757 2 3 57
10 1001.0
7
7
5
5
3
2
2
1.0
10
2SC2812N
f=1MHz
IT04206
1.0 10
23 57 100
23 57 23 5
0.1
0.01
2
7
5
3
2
5
3
2SA1179N
IC / IB= --10 2SC2812N
IC / IB=10
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Cob -- VCB
Output Capacitance, Cob -- pF
5723
--1.0 5723
--10 23
--100
7
100
5
3
7
5
3
2
IT04201
IT04199
5732
--0.1 --1.0 5732 --10 573232
--100
1000
5
3
7
100
2
7
5
2SA1179N
VCE= --6V
2SA1179N
VCE= --6V
Ta=75°C
--25°C
25°C
IT04200
5732
0.1 5732
1.0 5732
10 32
100
1000
5
3
7
100
2
2SC2812N
VCE=6V
Ta=75°C
--25°C
25°C
5723
1.0 5723
10 23
100
7
100
5
3
7
5
3
2
IT04202
2SC2812N
VCE=6V
Gain-Bandwidth Product, fT -- MHz
fT -- IC fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
2SA1179N / 2SC2812N
No.7198-4/7
IT04207
0.1 23 57
1.0 23 57
10 23 57
100
0.01
0.001
7
2
7
5
3
2
5
3
7
2
IT04208
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
5
3
0.1
DC operation
ICP=0.3A
IC=0.15A
100μs
10μs
1ms
10ms
100ms
Ta=25°C
Mounted on a glass epoxy board (20301.6mm)
For PNP, the minus sign is omitted.
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- mW
2SA1179N / 2SC2812N
No.7198-5/7
Embossed Taping Speci cation
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
2SA1179N / 2SC2812N
No.7198-6/7
Outline Drawing Land Pattern Example
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.950.95
1.0
2.4
0.8
2SA1179N / 2SC2812N
PS No.7198-7/7
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