Ordering number : EN7198B 2SA1179N/2SC2812N Bipolar Transistor http://onsemi.com (-)50V, (-)150mA, Low VCE(sat), (PNP)NPN Single CPA Features * * Miniature package facilitates miniaturization in end products High breakdown voltage Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings (--)55 V (--)50 V VEBO IC (--)5 ICP IB PC Base Current Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg V (--)150 mA (--)300 mA (--)30 mA 200 mW 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7053-001 * Package * JEITA, JEDEC 0.45 0.55 0.13 1.3 0.95 2SA1179N6-TB-E 2SA1179N6-CPA-TB-E 2SC2812N6-TB-E 2SC2812N6-CPA-TB-E : CPA : SC-59, TO-236, SOT-23, TO-236AB * Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB 0 to 0.1 0.55 2 2.4 3 1 0.2 MIN Package Dimensions TB 1.3 MAX 1.9 2.93 Semiconductor Components Industries, LLC, 2013 August, 2013 L LOT No. 2SA1179N LOT No. M LOT No. CPA Marking LOT No. 1.0 1 : Base 2 : Emitter 3 : Collector 2SC2812N 91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7 2SA1179N / 2SC2812N Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Ratings Conditions min Emitter Cutoff Current ICBO IEBO VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT VCE=(--)6V, IC=(--)1mA 2SC2812N : VCE=6V, IC=1mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage typ 200 VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO (--)0.1 A (--)0.1 A 400 2SA1179N : VCE=--6V, IC=--10mA V(BR)CBO V(BR)CEO Unit max 100 MHz (180) MHz (4.0)3.0 pF (--0.15)0.1 IC=(--)50mA, IB=(--)5mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(--)10A, IC=0A (--)0.5 V (--)1.0 V (--)55 V (--)50 V (--)5 V * : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws : Rank hFE 6 200 to 400 Ordering Information Package Shipping 2SA1179N6-TB-E Device CPA 3,000pcs./reel 2SA1179N6-CPA-TB-E CPA 3,000pcs./reel 2SC2812N6-TB-E CPA 3,000pcs./reel 2SC2812N6-CPA-TB-E CPA 3,000pcs./reel IC -- VCE A --50 A --45 A 0 --4 A --35 --30A --25A --12 --8 Pb Free IC -- VCE 20 2SA1179N --20A --15A --10A --4 2SC2812N 50A 45A Collector Current, IC -- mA Collector Current, IC -- mA --16 memo --5A 16 40A 35A 12 30A 25A 20A 8 15A 4 10A 5A IB=0A 0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 --50 10 20 30 40 Collector-to-Emitter Voltage, VCE -- V IT04195 IC -- VBE --240 50 IT04196 IC -- VBE 240 2SA1179N VCE= --6V 2SC2812N VCE=6V --200 --160 --120 --80 160 120 Ta=75 C 25C --25C Collector Current, IC -- mA 200 Ta=75 C 25C --25C Collector Current, IC -- mA IB=0A 80 40 --40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT04197 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT04198 No.7198-2/7 2SA1179N / 2SC2812N hFE -- IC 1000 hFE -- IC 1000 2SA1179N VCE= --6V 7 2SC2812N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 5 Ta=75C 25C 3 --25C 2 5 Ta=75C 3 --25C 25C 2 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 3 2 100 7 5 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 2 3 5 7 10 2 3 5 7 100 2 3 IT04200 f T -- IC 2SC2812N VCE=6V 5 3 2 100 7 5 3 1.0 3 2 3 5 7 2 10 3 5 7 Cob -- VCB 2 2SC2812N f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 IT04202 2SA1179N f=1MHz 10 7 5 3 2 10 7 5 3 2 1.0 1.0 7 5 7 5 7 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 IT04203 2 --0.1 7 5 3 3 5 7 --10 2 3 5 2 1.0 3 7 --100 Collector Current, IC -- mA 2 3 5 IT04205 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 7 7 100 IT04204 VCE(sat) -- IC 5 2SA1179N IC / IB= --10 2 --1.0 5 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 Collector Current, IC -- mA IT04201 Cob -- VCB 2 5 7 1.0 7 2SA1179N VCE= --6V 3 --1.0 2 3 Collector Current, IC -- mA f T -- IC 7 Gain-Bandwidth Product, f T -- MHz 100 0.1 5 7--100 2 3 IT04199 2SC2812N IC / IB=10 3 2 0.1 7 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 IT04206 No.7198-3/7 2SA1179N / 2SC2812N ASO s m s s op 0m DC 7 5 10 0.1 100s 1m IC=0.15A 2 10 Collector Current, IC -- A 10s ICP=0.3A 3 er ati on 3 2 0.01 7 5 3 2 Ta=25C Mounted on a glass epoxy board (20301.6mm) For PNP, the minus sign is omitted. 0.001 0.1 2 3 PC -- Ta 250 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- mW 7 5 200 150 100 50 0 5 7 100 IT04207 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT04208 No.7198-4/7 2SA1179N / 2SC2812N Embossed Taping Specification 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E No.7198-5/7 2SA1179N / 2SC2812N Outline Drawing Land Pattern Example 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.7198-6/7 2SA1179N / 2SC2812N ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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