NPN SILICON PLANAR TRANSISTORS 2N 1893
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage VCEO 80 V
Collector Emitter Voltage VCER 100 V
Collector Base Voltage VCBO 120 V
Emitter Base Voltage VEBO 7.0 V
Collector Current Continuous IC0.5 A
Total DeviceDissipation @ Ta=25ºC PD0.8 W
Derate Above 25ºC 4.57 mW/ºC
Total Deivice Dissipation@ Tc=25ºC PD3.0 W
Derate Above 25ºC 17.2 mW/ºC
Operating And Storage Junction Tj, Tstg -65 to +200 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 219 ºC/W
Junction to Case Rth(j-c) 58.3 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Breakdown Voltage BVCER(sus) IC=100mA,RBE =10Ω100 V
Collector Emitter Sustaining Voltage BVCEO(sus) *I
C=10mA, IB=0 80 V
Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 120 V
Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 7.0 V
Collector Cutoff Current ICBO VCB=90V, IE=0 10 nA
VCB=90V, IE=0,TA=150ºC 15 µA
Emitter Cutoff Current IEBO VEB=5V,IC=0 10 nA
DC Current Gain hFE*I
C=1mA,VCE=10V 20
IC=10mA,VCE=10V 35
IC=10mA,VCE=10V 20
TC=-55ºC
IC=150mA,VCE=10V 40 120
Collector Emitter (Sat) Voltage VCE(Sat) IC=50mA,IB=5.0mA 1.2 V
IC=150mA,IB=15mA 5.0 V
Base Emitter (Sat) Voltage VBE(Sat) IC=50mA,IB=5.0mA 0.9 V
IC=150mA,IB=15mA 1.3
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
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