DATA SH EET
Product specification
Supersedes data of 1999 Apr 23 2004 Oct 28
DISCRETE SEMICONDUCTORS
2N4401
NPN switching transistor
b
ook, halfpage
M3D186
2004 Oct 28 2
Philips Semiconductors Product specification
NPN switching transistor 2N4401
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Industrial and consumer switching applications.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: 2N4403.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
2N4401 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 V
VCEO collector-emitter voltage open base 40 V
VEBO emitter-base voltage open collector 6V
ICcollector current (DC) 600 mA
ICM peak collector current 800 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 630 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
2004 Oct 28 3
Philips Semiconductors Product specification
NPN switching transistor 2N4401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current VCB =60V; I
E=0 A 50 nA
IEBO emitter-base cut-off current VEB =6V; I
C=0 A 50 nA
hFE DC current gain VCE = 1 V; see Fig.2
IC= 0.1 mA 20
IC= 1 mA 40
IC=10mA 80
IC= 150 mA; note 1 100 300
VCE =2V; I
C= 500 mA; note 1 40
VCEsat collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 400 mV
IC= 500 mA; IB= 50 mA; note 1 750 mV
VBEsat base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 950 mV
IC= 500 mA; IB= 50 mA; note 1 1.2 V
Cccollector capacitance VCB =5V; I
E=i
e= 0 A; f = 1 MHz 6.5 pF
Ceemitter capacitance VEB = 500 mV; IC=i
c= 0 A;
f = 1 MHz 30 pF
fTtransition frequency VCE =10V; I
C= 20 mA; f = 100 MHz 250 MHz
Switching times (between 10 % and 90 % levels); see Fig.3
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff =15 mA 35 ns
tddelay time 15 ns
trrise time 20 ns
toff turn-off time 250 ns
tsstorage time 200 ns
tffall time 60 ns
2004 Oct 28 4
Philips Semiconductors Product specification
NPN switching transistor 2N4401
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MGD811
10111010
2103
hFE
IC mA
VCE = 1 V
RC
R2
R1
DUT
mlb826
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
VI
VCC
Fig.3 Test circuit for switching times.
Vi= 9.5 V; T = 500 µs; tp=10 µs; tr=t
f3 ns.
R1 = 68 ; R2 = 325 ; RB= 325 ; RC= 160 .
VBB =3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi=50.
2004 Oct 28 5
Philips Semiconductors Product specification
NPN switching transistor 2N4401
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 97-02-28
04-06-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
2004 Oct 28 6
Philips Semiconductors Product specification
NPN switching transistor 2N4401
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 28 Document order number: 9397 750 13546