BSX20
Low Power Bipolar Transistors
Page 1 07/04/06 V1.0
Feature:
••NPN Silicon Planar Switching Transistors.
Applications:
••High speed saturated switching applications.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
BSX20
Low Power Bipolar Transistors
Page 2 07/04/06 V1.0
Absolute Maximum Ratings
Description Symbol Value Unit
Collector Base Voltage VCBO 40
V
Collector Emitter Voltage VCES 40
Collector Emitter Voltage VCEO 15
Emitter Base Voltage VEBO 4.5
Collector Peak Current (t = 10µs) ICM 0.5 A
Power Dissipation at Ta= 25°C
at TC = 25°C Ptot 0.36
1.20 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance
Junction to Case Rth (j-c) 146
°C/W
Junction to Ambient Rth (j-a) 486
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit
Collector-Cut off Current
ICBO
ICES
ICEX
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta= 150°C
VCE = 15V, VBE = 0, Ta= 55°C
VCE = 40V, VBE = 0
VCE = 15V, VBE = -3V, Ta= 55°C
-
400
30
400
1.0
600
nA
µA
nA
µA
nA
Emitter-Cut off Current IEBO VEB = 4.5V, IC = 0 - 10 µA
Base-Cut off Current IBEX VCE = 15V, VBE = -3V, Ta= 55°C - 600 nA
Collector-Emitter (sus) Voltage VCER (sus)* IC = 10mA, RBE = 10Ω20 -
V
Collector-Emitter Voltage VCEO* IC = 10mA, IB= 0 15 -
Collector Emitter Saturation Voltage VCE (Sat)*
IC = 10mA, IB = 1mA
IC = 100mA, IB = 10mA
IC = 10mA, IB = 0.3mA
-
0.25
0.60
0.30
Base Emitter On Voltage VBE (on) IC = 30µA, VCE = 20V, Ta= 100°C 0.35 -
Base Emitter Saturation Voltage VBE (Sat)*IC = 10mA, IB = 1mA
IC = 100mA, IB = 10mA
0.70
-
0.85
1.50
DC Current hFE *
IC = 10mA, VCE = 1V
IC = 100mA, VCE = 2V
IC = 10mA, VCE = 1V, Ta= -55°C
40
20
20
- -
BSX20
Low Power Bipolar Transistors
Page 3 07/04/06 V1.0
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit
Dynamic Characteristics
Transistion Frequency ftVCE = 10V, IC = 10mA 500 - MHz
Emitter Base Capacitance Cebo IC = 0, VEB = 1V - 4.5
pF
Collector Base Capacitance Cbo IE = 0, VCB = 5V - 4.0
Storage Time ts
IC = 10mA, VCC = 10V,
IB1 = -IB2 = 10mA - 13
ns
Turn on Time ton
IC = 10mA, VCC = 3V,
IB1 = 3mA
IC = 100mA, VCC = 6V,
IB1 = 40mA
-
12
7.0
Turn off Time toff
IC = 10mA, VCC = 3V,
IB1 = 3mA, IB2 = -1.5mA
IC = 100mA, VCC = 6V,
IB1 = 40mA, IB2 = -20mA
-
18
21
*Pulsed : Pulse duration = 300µs, duty cycle = 1%.
Package Part Number
TO-18 BSX20
Part Number Table
For enquiries from all other markets
BSX20
Low Power Bipolar Transistors
Page 4 07/04/06 V1.0
Notes:
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