Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
23 40
48 65
RθJL 12 16
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12
Pulsed Drain Current B
Power Dissipation
TA=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient ASteady-State
12
10
80
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
30
W
Junction and Storage Temperature Range
A
PD
°C
3
2.1
-55 to 150
TA=70°C
ID
AO4402
N-Channel Enhancement Mode Field Effect Transistor
March 2002
Features
VDS (V) = 30V
ID = 12A
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
RDS(ON) < 22mΩ (VGS = 2.5V)
General Description
The AO4402 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO4402
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.6 0.8 1.2 V
ID(ON) 60 A
11.1 14
TJ=125°C 16 19.2
13.1 16 m
Ω
21 26 m
Ω
gFS 25 50 S
VSD 0.8 1 V
IS4.5 A
Ciss 1630 pF
Coss 201 pF
Crss 142 pF
Rg0.8 Ω
Qg19 nC
Qgs 3.3 nC
Qgd 5.2 nC
tD(on) 3ns
tr4.7 ns
tD(off) 33.5 ns
tf6ns
trr 21 ns
Qrr 11 nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
Reverse Transfer Capacitance
IF=10A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=4.5V, ID=10A
IS=10A,VGS=0V
VDS=5V, ID=5A
VGS=2.5V, ID=8A
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=12A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=1.5V
2V
2.5V
3V
4.5V
10V
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
0
5
10
15
20
25
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=2.5V
VGS=10V
VGS=4.5V
0.0
10.0
20.0
30.0
40.0
0.0 2.0 4.0 6.0 8.0 10.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
V
GS
=4.5V
VGS=10V
ID=10A
25°C
125°C
ID=10A
VGS=0V
Alpha and Omega Semiconductor, Ltd.
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
0 4 8 12 16 20 24
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=12A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
θ
E
θ
h
L
aaa
b
E1
c
e
D
A
A2
A1
SYMBOLS
0.050 BSC
0.50
1.27
8°
0.10
0.10
5.00
6.20
4.00
0.51
0.25
−−−
1.55
−−−5.80
0°
0.25
0.40
−−− −−−
−−−
−−−
−−−
1.27 BSC
0.19
3.80
4.80
1.45
0.33
−−−
0.00
−−−
−−−
−−−
−−−
1.50
1.45
−−−
−−−0.228
0.010
0.016
−−−
0°−−−
−−−
−−−
−−−
0.057
0.007
0.013
−−−
0.150
0.189
0.000
−−−
−−−
−−−
−−−
0.059
0.057
−−−
0.244
8°
0.020
0.050
0.004
0.010
0.157
0.197
0.061
0.020
−−−
0.004
DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS
MAXMIN NOM MIN NOM MAX
SO-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERNPACKAGE MARKING DESCRIPTION
NOTE:
LG - AOS LOGO
PARTN - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
AO4400
AO4401
CODE
4401
4400 4800
CODE
AO4800
AO4801
PART NO.
4801 4700
CODE
AO4700
AO4701
PART NO.
4701
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, INC.