
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH62N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 62 A
ISM Repetitive, Pulse Width Limited by TJM 248 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 445 ns
QRM 8.2 μC
IRM 36.7 A
IF = 31A, -di/dt = 100A/μs
VR = 100V
TO-247 (IXTH) Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P O 0K M D B M
+
O J M C A M
+
12 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 25 56 S
RGi Gate Input Resistance 0.9
Ciss 5800 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 4260 pF
Crss 2.3 pF
Co(er) 210 pF
Co(tr) 890 pF
td(on) 28 ns
tr 11 ns
td(off) 56 ns
tf 5 ns
Qg(on) 100 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 nC
Qgd 35 nC
RthJC 0.16 C/W
RthCS 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS