CBETO-92
C
B
E
BC
C
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emi t t er Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tst
g
Operating and Storage Junction Temperature Ra nge -55 to +150 °C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N3904 *MMBT3904 **PZT3904
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance , Junct i on to Case 83. 3 °C/W
RθJA Therm al Resis tance, J unction to Am bi ent 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2N3904 MMBT3904
SOT-23
Mark: 1A
PZT3904
2N3904 / MMBT3904 / PZT3904
2N3904/MMBT3904/PZT3904, Rev A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-E mitter Break down
Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdow n Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, V EB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
fTCurrent Gain - Bandwidth Product IC = 10 mA , VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 5.0 V , IE = 0,
f = 1.0 MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, I C = 0,
f = 1.0 MHz 8.0 pF
NF Noise Figure IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7kHz 5.0 dB
tdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
t
r
Rise Ti me IC = 10 mA, IB1 = 1.0 mA 35 ns
tsStorage Time VCC = 3.0 V, IC = 10mA 200 ns
tfFall Time IB1 = IB2 = 1.0 mA 50 ns
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE
(
sat
)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.3 V
V
VBE
(
sat
)
Base-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
2N3904 / MMBT3904 / PZT3904
Typical Characteristics
Base-E mi tter ON Voltage vs
Collector C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Colle ctor-Emitter S aturation
Vol t ag e vs Collect or Cu rrent
0.1 1 10 100
0.05
0.1
0.15
I - COLLECT OR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Curre nt
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typi cal Pu lsed C ur r ent Gai n
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L P ULSED CU RR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Power Dissipation vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DI SSI PATIO N (W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100 µA, R = 500 Ω
CS
I = 1.0 m A
R = 200Ω
C
S
I = 50 µA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ - DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQU ENCY (MHz)
h - CURRENT GAI N (dB)
θ
V = 40 V
CE
I = 10 mA
C
hfe
fe
Tur n- On Time vs Collector Curr en t
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Colle ctor Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLL E CTOR CURREN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Cu rr ent Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CUR R ENT GAIN
V = 1 0 V
CE
C
fe
f = 1 .0 kHz
T = 25 C
A o
Output Admi tta n c e
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPU T ADM IT TANCE ( mh os)
V = 10 V
CE
C
oe
f = 1.0 kH z
T = 25 C
A o
µ
Input I m pe danc e
0.1 1 10
0.1
1
10
100
I - CO LL ECT O R CURRE NT (mA)
h - INPU T I MPED ANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kH z
T = 25 C
A o
Ω
Voltage Feedback Ratio
0.1 1 10
1
2
3
4
5
7
10
I - COLLE CTOR CURRENT (mA)
h - VO LTAGE F EED B ACK RATIO (x 1 0 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
