© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 10N100 10 A
12N100 12 A
IDM TC= 25°C, pulse width limited by TJM 10N100 40 A
12N100 48 A
IAR TC= 25°C 10N100 10 A
12N100 12 A
EAR TC= 25°C30mJ
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ =25°C 250 µA
V GS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 10N100 1.20 Ω
12N100 1.05 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
zInternational standard packages
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic Rectifier
Applications
zDC-DC converters
zSynchronous rectification
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
zTemperature and lighting controls
zLow voltage relays
Advantages
zEasy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
zSpace savings
zHigh power density
DG
VDSS ID25 RDS(on)
IXFH/IXFM 10 N100 1000 V 10 A 1.20 ΩΩ
ΩΩ
Ω
IXFH/IXFM 12 N100 1000 V 12 A 1.05 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
(TAB)
HiPerFETTM
Power MOSFETs
DS91531F(01/04)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 6 10 S
Ciss 4000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 310 pF
Crss 70 pF
td(on) 21 50 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns
td(off) RG = 2 Ω (External), 62 100 ns
tf32 50 ns
Qg(on) 122 155 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 45 nC
Qgd 50 80 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 10N100 10 A
12N100 12 A
13N100 12.5 A
ISM Repetitive; 10N100 40 A
pulse width limited by TJM 12N100 48 A
13N100 50 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr TJ =25°C 250 ns
TJ = 125°C 400 ns
QRM TJ =25°C1µC
TJ = 125°C2µC
IRM TJ =25°C10A
TJ = 125°C15A
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
∅b .97 1.09 .038 .043
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
TO-204 AA (IXFM) Outline
Pins 1 - Gate 2 - Source
Case - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXFH 10N100 IXFH 12N100
IXFM 10N100 IXFM 12N100
© 2004 IXYS All rights reserved
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/VG(th) - Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BVDSS
VGS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
2
4
6
8
10
12
14
16
18
20
10N100
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
RDS(on) - Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 5 10 15 20 25
RDS(on) - Normalized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VGS = 10V
VGS - Volts
012345678910
ID - Amperes
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
0 5 10 15 20
ID - Amperes
0
2
4
6
8
10
12
14
16
18
20
6V
7V
VGS = 10V
12N100
ID = 6A
VGS = 15V
5V
TJ = 25°C
TJ = 25°C
TJ = 25°C
IXFH 10N100 IXFH 12N100
IXFM 10N100 IXFM 12N100
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.8 Capacitance Curves Fig.9 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
VDS - Volts
1 10 100 1000
ID - Amperes
0.1
1
10
Gate Charge - nCoulombs
0 25 50 75 100 125 150
VGS - Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID - Amperes
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
0 5 10 15 20
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K
/
W
0.001
0.01
0.1
1
D=0.5
Crss
Coss
10µs
100µs
1ms
10ms
100ms
Ciss
Limited by RDS(on)
VDS = 500V
ID = 6A
IG = 10mA
Single Pulse
f = 1MHz
VDS = 25V
TJ = 125°C
TJ = 25°C
D=0.2
D=0.1
D=0.05
D=0.01
D=0.02
IXFH 10N100 IXFH 12N100
IXFM 10N100 IXFM 12N100
