Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C
BC178, A, B, C
BC179, A, B, C
TO-18
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL BC177 BC178 BC179 UNIT
Collector -Emitter Voltage VCEO 45 25 20 V
Collector -Emitter Voltage VCES 50 30 25 V
Collector -Base Voltage VCBO 50 30 25 V
Emitter -Base Voltage VEBO 5.0 5.0 5.0 V
Collector Current Continuous IC 0.2 A
Power Dissipation@ Ta=25 degC PD 0.6 W
Derate Above 25 deg C 2.28 mW/deg C
Power Dissipation@ Tc=25 degC PD 1.0 W
Derate Above 25 deg C 6.67 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 175 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-Cut off Current ICES VCE=20V, IE=0 - 100 nA
Tamb=125 deg C
VCE=20V, IE=0 - 4.0 uA
Collector -Base Voltage VCBO IC=10uA, IE=0 BC177 50 - V
BC178 30 - V
BC179 25 - V
Collector -Emitter Voltage VCEO IC=2mA,IB=0 BC177 45 - V
BC178 25 - V
BC179 20 V
Emitter-Base Voltage VEBO IE=10uA, IC=0 5.0 - V
DC Current hFE IC=2mA, VCE=5V BC177 120 460
BC178 120 800
BC179 180 800
A Group 120 220
B Group 180 460
C Group 380 800
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.5mA - 0.20 V
IC=100mA,IB=5mA - 0.60 V
Base Emitter Saturation Voltage VBE(Sat) IC=10mA,IB=0.5mA - 0.80 V
IC=100mA,IB=5mA - 0.90 - V
Base Emitter on Voltage VBE(on) IC=2mA, VCE=5V 0.60 0.75 V
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3