ES3A thru ES3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Glass passivated chip junction * Ideal for automated placement * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified DO-214AB (SMC) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V to 200 V IFSM 100 A trr 20 ns VF 0.90 V TJ max. 150 C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code ES3A ES3B ES3C ES3D EA EB EC ED UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 Maximum average forward rectified current at TL = 100 C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Revision: 14-Mar-12 V Document Number: 88589 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3A thru ES3D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL ES3A ES3B VF (1) 3.0 A TA = 25 C Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum reverse recovery time IF = 3.0 A, VR = 30 V, dI/dt = 50 A/s, Irr = 10 % IRM Maximum stored charge IF = 3.0 A, VR = 30 V, dI/dt = 50 A/s, Irr = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz TJ = 100 C TJ = 25 C 20 ns 30 ns 50 15 Qrr TJ = 100 C A 500 trr nC 35 CJ UNIT V 10 trr TJ = 25 C ES3D 0.90 IR TA = 100 C ES3C 45 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ES3A ES3B ES3C RJA (1) 47 RJL (1) 12 ES3D UNIT C/W Note Units mounted on P.C.B. with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel ES3DHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel (1) 0.211 9AT 3500 13" diameter plastic tape and reel PREFERRED P/N ES3DHE3/9AT Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) Copper Pad Areas 8.3 ms Single Half Sine-Wave at TL = 100 C 125 100 75 50 25 0 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 14-Mar-12 Document Number: 88589 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3A thru ES3D www.vishay.com Vishay General Semiconductor 50 TJ = 150 C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.1 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 40 30 20 10 0 0.3 0.5 0.7 0.9 1.1 1.3 0.1 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (A) 10 000 TJ = 150 C TJ = 125 C 1000 TJ = 100 C 100 10 1 TJ = 25 C 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 14-Mar-12 Document Number: 88589 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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