ES3A-E3/57T - Vishay [General Semiconductor]

ES3A thru ES3D

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Revision: 14-Mar-12 1Document Number: 88589

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 50 V to 200 V

IFSM 100 A

trr 20 ns

VF0.90 V

TJ max. 150 °C

DO-214AB (SMC)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT

Device marking code EA EB EC ED

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V

Maximum RMS voltage VRMS 35 70 105 140 V

Maximum DC blocking voltage VDC 50 100 150 200 V

Maximum average forward rectified current at TL = 100 °C IF(AV) 3.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 100 A

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

ES3A thru ES3D

www.vishay.com Vishay General Semiconductor

Revision: 14-Mar-12 2Document Number: 88589

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1) Units mounted on P.C.B. with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL ES3A ES3B ES3C ES3D UNIT

Maximum instantaneous

forward voltage 3.0 A VF (1) 0.90 V

Maximum DC reverse current at

rated DC blocking voltage

TA = 25 °C IR

10 µA

TA = 100 °C 500

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns

Maximum reverse recovery time IF = 3.0 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C trr

30 ns

TJ = 100 °C 50

Maximum stored charge IF = 3.0 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C Qrr

15 nC

TJ = 100 °C 35

Typical junction capacitance 4.0 V, 1 MHz CJ45 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT

Typical thermal resistance RJA (1) 47 °C/W

RJL (1) 12

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel

ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel

ES3DHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel

ES3DHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel

3.0

80 90 100 110 120 130 140 150

Average Forward Rectified Current (A)

Lead Temperature (°C)

2.0

1.0

Resistive or Inductive Load

P.C.B. Mounted on

0.31" x 0.31" (8.0 mm x 8.0 mm)

Copper Pad Areas

100

125

150

1 10010

Peak Forward Surge Current (A)

Number of Cycles at 60 Hz

8.3 ms Single Half Sine-Wave

at T

= 100 °C

ES3A thru ES3D

www.vishay.com Vishay General Semiconductor

Revision: 14-Mar-12 3Document Number: 88589

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.1

100

Instantaneous Forward Current (A)

= 150 °C

= 100 °C

= 25 °C

= 125 °C

0.1 0.3 0.5 0.7 0.9 1.1 1.3

Instantaneous Forward Voltage (V)

0.1

100

1000

10 000

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

0 20406080 100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

Reverse Voltage (V)

Junction Capacitance (pF)

0.1

110 100

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

Cathode Band

DO-214AB (SMC)

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

0.060 (1.52)

0.030 (0.76)

0.103 (2.62)

0.079 (2.06)

Mounting Pad Layout

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.185 (4.69) MAX.

0.320 (8.13) REF.

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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