2N5088
2N5089 MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 2N5088
2N5089 30
25 V
V
VCBO Collector-Base Voltage 2N5088
2N5089 35
30 V
V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 100 mA
TJ, Tst
g
Operating and Storage Junction Tempera ture Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5088
2N5089 *MMBT5088
*MMBT5089
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83. 3 °C/W
RθJ
A
Thermal Resistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088
5089
IC = 1.0 mA , V CE = 5.0 V 5088
5089
IC = 10 mA , V CE = 5.0 V* 5088
5089
300
400
350
450
300
400
900
1200
VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
VBE(on)Base-Emitter On Volt age IC = 10 m A , V CE = 5.0 V 0.8 V
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO Collector-E mitter Breakdown
Voltage* IC = 1.0 mA, IB = 0 5088
5089 30
25 V
V
V(BR)CBO Collector-B as e Break down Voltage IC = 100 µA, IE = 0 5088
5089 35
30 V
V
ICBO Collector Cut off Current VCB = 20 V, IE = 0 5088
VCB = 15 V, IE = 0 5089 50
50 nA
nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0 50
100 nA
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.1 1 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.91 1f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
fTCurrent Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 m A ,
f = 20 MHz 50 MHz
Ccb Collector-Bas e Capacitance VCB = 5.0 V, IE = 0, f = 100 k Hz 4.0 pF
Ceb Em it t er-B as e Capac it ance VBE = 0.5 V, IC = 0, f = 100 k Hz 10 pF
hfe Sm all-S ignal Current Gain IC = 1.0 mA, V CE = 5. 0 V , 5088
f = 1.0 kHz 5089 350
450 1400
1800
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088
RS = 10 kΩ,5089
f = 10 Hz to 15.7 kHz
3.0
2.0 dB
dB
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Co llector-E mitter Sa turati on
Volta ge vs C ol lector Curr ent
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - CO L LECTO R CURRENT (mA)
V - COLLECTO R-EM ITT ER VO LTA GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter Saturati on
Voltage vs C ol lect or Cu rr ent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - CO L LECTO R CURRE NT (m A)
V - CO LLECTOR-EM ITTER VOLTAGE (V)
C
BESAT
β = 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Vol tage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (m A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Ty pical Pu ls ed C u rrent Ga in
vs Co ll ect or Curr e nt
0.01 0.03 0.1 0.3 1 3 10 30 100
0
200
400
600
800
1000
1200
I - COLLEC TOR CURRENT ( mA)
h - TYPI CAL PUL SED CUR REN T G AI N
C
FE
125 °C
25 °C
- 4 0 °C
V = 5. 0 V
CE
C o ll ector -C u to ff Cu rrent
vs A mbient Temp er atu re
25 50 75 100 125 150
0.1
1
10
T - AM BIENT TEM P E RATURE ( C)
I - COLLE CTOR CU RR ENT (nA)
A
CBO
V = 45V
°
CB
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Inp ut and Ou tput Capacitance
vs Reverse Bias Voltage
048121620
0
1
2
3
4
5
REVERS E BIAS VOLT AGE (V)
CAPACITAN CE (pF)
f = 1.0 MHz
Cob
C
te
Wideband N ois e F re que ncy
vs Source Resistanc e
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N F - NO IS E F IG U RE (d B)
V = 5.0 V
BA NDW IDTH = 15 .7 k Hz
CE
I = 10 µA
C
I = 100 µA
C
SΩ
I = 30 µA
C
Contours of Constant Gain
B andwidth Pr oduc t ( f )
0.1 1 10 100
1
2
3
5
7
10
I - COLLECTO R CURRE NT (mA)
V - COLLECTOR VOLTAGE (V)
C
17 5 MHz
T
CE
15 0 MHz
12 5 MHz
75 MHz
10 0 MHz
Powe r Dissipati on vs
Ambient Temperature
0 25 50 75 100 125 150
0
125
250
375
500
625
TEMPERATURE ( C)
P - POW ER DISSIPAT ION (mW)
D
o
TO-92
SOT-23
Noise F ig ure vs Frequency
0.0001 0.001 0.01 0.1 1 10 100
0
2
4
6
8
10
f - FREQU ENC Y (MHz)
N F - NOI S E FIGU RE ( dB)
V = 5.0V
CE
I = 200 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 500 Ω
C
S
I = 100 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 5 . 0 k Ω
CS
No rmal ized Col lecto r-Cutoff C urren t
vs A mbient Temp eratu re
25 50 75 100 125 150
1
10
100
1000
T - A MBIENT TEMPERATURE ( C)
CH AR AC TERIS TIC S R ELATI VE TO VALU E AT T = 25 C
A
A
°
°
Typical Characteristics (continued)
Contours of Const ant
Narrow Band Noise Figur e
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - CO LLECTO R CURRE NT ( A)
R - SOURCE RESISTANCE ( )
µ
C
Ω
S
V = 5.0 V
f = 1.0 kHz
BANDWIDT H
= 200 Hz
CE
6. 0 dB
3. 0 dB
4. 0 dB
8. 0 dB
2. 0 dB
Cont ours of Constant
Narrow Band Noise Figure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTO R CUR RENT ( A)
R - SOU RC E RESISTANCE ( )
µ
C
Ω
S
V = 5.0 V
f = 1 00 Hz
BANDWIDT H
= 20 Hz
CE
3. 0 dB
4. 0 dB
8. 0 dB
10 dB
12 dB
14 dB
6. 0 dB
Contours of Con stant
Nar r ow Ba nd N oise Figu r e
1 10 100 1000
100
200
500
1000
2000
5000
10000
I - COLL ECTOR CURRENT ( A)
R - SOURCE RESIST ANCE ( )
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kH z
BANDWIDTH
= 2. 0k Hz
CE
Ω
S
µ
Contours of Constant
Na rrow Band Noise Fi gure
0.01 0.1 1 10
100
200
500
1000
2000
5000
10000
I - CO LLECTOR CURR E NT ( A )
R - SOURCE RESISTANCE ( )
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
Ω
S
µ
f = 1. 0 MHz
BANDWIDTH
= 200kHz
6.0
dB
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Typical Common Emitter Characteristics (f = 1.0 kHz)
NPN General Purpose Amplifier
(continued)
Typ ical Common Emit te r Char acter istic s
0.1 0.2 0.5 1 2 5 10 20 50 100
0.01
0.1
1
10
100
I - CO L LE CTO R CUR RENT ( mA)
CHARACTERI S TICS RELATIVE TO VAL UE ( I =1mA)
C
C
f = 1.0kHz hoe
hoe
h and h
ie
hfe
hre
h ie h fe
re
Typical Common Emi tter Characteristi cs
-100 -50 0 50 100 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEM P ERATURE ( C)
CHARACTE RISTICS RE LATIVE TO VALUE(T =25 C)
J
A
°
h oe
h re h ie
h fe
h oe
h re
h ie
h fe
V = 5.0V
f = 1.0kHz
I = 1.0 m A
CE
C
°
Typical Commo n Emi t ter Characteristics
0 5 10 15 20 25
0.8
0.9
1
1.1
1.2
1.3
1.4
V - COLLEC TOR VOLTAGE (V)
C H AR AC TER ISTI CS R ELATIVE TO VAL U E( V = 5V)
CE
CE
I = 1 .0mA
f = 1. 0kHz
T = 25 C
C
A°
h oe
h oe
h re
h ie
h fe
h re
h ie
h fe
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reasonably expected to result in significant injury to the
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2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Semiconductor reserves the right to make changes at
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In Design
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