Standard Power MOSFET IXTH 50P085 IXTT 50P085 P-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -85 V VDGR TJ = 25C to 150C; RGS = 1 M -85 V VGS Continuous 20 V VGSM Transient 30 V -50 A ID25 TC = 25C TC = 25C, pulse width limited by TJ IAR -200 A TC = 25C -50 A EAR TC = 25C 30 mJ PD TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C 250 C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 5 Symbol Test Conditions VDSS VGS = 0 V, ID = -250 A -85 VGS(th) V DS = VGS, ID = -250 A -3.0 IGSS V GS = 20 VDC, VDS = 0 IDSS V DS = 0.8 * VDSS V GS = 0 V RDS(on) VGS = -10 V, ID = 0.5 * ID25 g g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C V -5.0 V 100 nA -25 -1 A mA 55 m TO-247 (IXTH) D (TAB) TO-268 (IXTT) G S G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain Features * International standard packages * * * * Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Applications * High side switching * * * Push-pull amplifiers DC choppers Automatic test equipment Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * (c) 2005 IXYS All rights reserved = -85 V = -50 A = 55 m RDS(on) Symbol IDM VDSS ID25 High power density DS99140B(02/05) IXTH 50P085 IXTT 50P085 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = -10 V; ID = ID25, pulse test 8 Ciss Coss VGS = 0 V, VDS = -25 V, f = 1 MHz 16 S 4200 pF 1720 pF C rss 750 pF td(on) 46 ns tr VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 39 ns td(off) RG = 4.7 (External) 86 ns 38 ns 150 nC 36 nC 70 nC tf Qg(on) Qgs VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 0.42 (TO-247) 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, di/dt = 100 A/s, VR = -50 V -25 A -200 A -3 V 180 TO-247 (IXTH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 (IXTT) Outline ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 2 - Drain Tab - Drain 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXTH 50P085 IXTT 50P085 Fig. 1. Output Characte ris tics @ 25 Deg. C Fig. 2. Exte nded Output Characteristics @ 25 de g. C -140 -50 VGS = -10V -9V -45 -120 -40 -8V -35 I D - Amperes I D - Amperes VGS = -10V -30 -7V -25 -20 -15 -6V -10 -5 -9V -100 -80 -8V -60 -40 -7V -20 -6V -5V -5V 0 0 0 -0.5 -1 -1.5 -2 0 -2.5 -2 -4 -6 -8 Fig. 3. Output Characte ris tics @ 125 Deg. C -14 -16 -18 -20 2 VGS = -10V -9V VGS = -10V 1.8 -40 -8V R D S (on) - Normalized I D - Amperes -12 Fig. 4. RDS(on) Norm alize d to ID25 Value vs. Junction Te m pe rature -50 -45 -10 V D S - Volts V D S - Volts -35 -30 -7V -25 -20 -6V -15 1.6 I D = -50A 1.4 I D = -25A 1.2 1 -10 0.8 -5V -5 0 0.6 0 -1 -2 -3 -4 -5 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to ID25 Value vs . ID Fig. 6. Drain Curre nt vs. Cas e Te m pe rature 2.4 -55 -50 VGS = -10V 2.2 -40 1.8 I D - Amperes R D S (on) - Normalized -45 2 TJ = 125C 1.6 1.4 -35 -30 -25 -20 -15 1.2 -10 TJ = 25C 1 -5 0.8 0 0 -25 -50 -75 I D - Amperes (c) 2005 IXYS All rights reserved -100 -125 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 50P085 IXTT 50P085 Fig. 7. Input Adm ittance Fig. 8. Transconductance 40 -150 35 TJ = -40C 25C 125C -100 -75 TJ = -40C 25C 125C 30 g f s - Siemens I D - Amperes -125 25 20 15 -50 10 -25 5 0 0 -4 -5 -6 -7 -8 -9 -10 -11 0 -25 -50 V G S - Volts -100 -125 -150 Fig. 10. Gate Charge Fig. 9. Source Current vs. Source-ToDrain Voltage -10 -150 VDS = -50V I D = -25A I G = -1mA -9 -125 -8 -7 -100 VG S - Volts I S - Amperes -75 I D - Amperes -75 TJ = 125C -50 -6 -5 -4 -3 TJ = 25C -25 -2 -1 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 0 20 40 60 80 100 120 140 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1.00 6000 f = 1MHz 4000 R (th) J C - (C/W) Capacitance - pF 5000 C iss 3000 C oss 2000 0.10 1000 C rss 0.01 0 0 -5 -10 -15 -20 -25 V D S - Volts -30 -35 -40 1 10 100 Pulse Width - milliseconds 1000