© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 52 A
IDM TC= 25°C, Pulse Width Limited by TJM -130 A
IATC= 25°C - 52 A
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting Torque (TO-3P,TO-220,TO-247) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
DS99912C(01/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA -100 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V -10 μA
TJ = 125°C -150 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 50 mΩ
PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA52P10P
IXTP52P10P
IXTQ52P10P
IXTH52P10P
VDSS = - 100V
ID25 = - 52A
RDS(on) ≤≤
≤≤
≤ 50mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zFast Intrinsic Diode
zDynamic dv/dt Rated
zAvalanche Rated
zRugged PolarPTM Process
zLow QG and Rds(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush-Pull Amplifiers
zDC Choppers
zCurrent Regulators
zAutomatic Test Equipment
GDS
TO-220AB (IXTP)
D (Tab)
TO-263 AA (IXTA)
GS
D (Tab)
D
S
G
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-3P (IXTQ)
D
G
S
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 12 20 S
Ciss 2845 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1015 pF
Crss 275 pF
td(on) 22 ns
tr 29 ns
td(off) 38 ns
tf 22 ns
Qg(on) 60 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 23 nC
RthJC 0.42 °C/W
RthCS (TO-3P)(TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 52 A
ISM Repetitive, Pulse Width Limited by TJM - 200 A
VSD IF = - 26A, VGS = 0V, Note 1 - 3.5 V
trr 120 ns
QRM 0.53 μC
IRM - 8.9 A
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = - 26A, -di/dt = -100A/μs
VR = - 50V, VGS = 0V
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
TO-263 Outline
TO-3P Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
TO-247 Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
1 = Gate
2 = Drain
3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-2.8-2.4-2.0-1.6-1.2-0.8-0.40.0
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 9V
- 5
V
- 6
V
- 7
V
- 8
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-130
-110
-90
-70
-50
-30
-10
-30-25-20-15-10-50
V
DS
- Vo lt s
I
D
- Amper es
V
GS
= - 10V
- 8
V
- 6
V
- 7
V
- 5
V
- 9
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-5.5-5.0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 9V
- 6
V
- 5V
- 7
V
- 8
V
Fig. 5. R
DS(on)
Norm alized to I
D
= - 26A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-100-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maxi mum Dr ai n C u r r en t vs.
Case Temper atu r e
-60
-50
-40
-30
-20
-10
0-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 4. R
DS(on)
Normalized to I
D
= - 26A Value vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= - 10V
I
D
= - 26
A
I
D
= - 52
A
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
Fig. 7. Input Admittance
-70
-60
-50
-40
-30
-20
-10
0-8.0-7.5-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0-5.0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volt s
V
DS
= - 50V
I
D
= - 26A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe O p er ati n g Area
1
10
100
1,000
1 10 100
V
DS
- Vo lts
I
D
- Amper es
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms 100µs
R
DS(on)
Limit @ V
GS
= - 15V
10ms
DC, 100ms
-
-
- -
-
--
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
IXYS REF: T_52P10P(B5)3-25-08-B
Fig. 13. Maximum Transient T herm al Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
