PMEG2005EB,115 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 2003 Feb 20 2003 Apr 04

DISCRETE SEMICONDUCTORS

PMEG2005EB

Low VF MEGA Schottky barrier

diode

M3D319

2003 Apr 04 2

NXP Semiconductors Product data sheet

Low VF MEGA Schottky barrier diode PMEG2005EB

FEATURES

•Forward current: 0. 5 A

•Reverse voltage: 20 V

•Very low forward voltage

•Guard ring protected

•Ultra small SMD package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Low current re ctification

•Low power consumption applications (e.g. handheld

devices).

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier diode, encapsulated in a SOD523

(SC-79) ultra small SMD plastic package.

PINNING

PIN DESCRIPTION

1cathode

2anode

handbook, halfpage ka

;

Top view MAM403

Fig.1 Simplified outline (SOD523; SC-79) and

symbol.

Marking code: L5.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −20 V

IFcontinuous forward current −500 mA

IFRM repetitive peak forward current tp = 1 ms; δ ≤ 0.25 −3.5 A

IFSM non-repetitive peak forward current t = 8 ms square wave −6 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

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NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2005EB

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C; unless otherwise specified.

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOD523 (SC-79) standard mounting conditions.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFcontinuous forward v oltage see Fig.2

IF = 0.1 mA 120 180 mV

IF = 1 mA 180 240 mV

IF = 10 mA 245 290 mV

IF = 100 mA 320 380 mV

IF = 500 mA 430 480 mV

IRcontinuous rev ers e current VR = 10 V; see Fig.3; note 1 7 30 μA

Cddiode capacitan ce VR = 1 V; f = 1 MH z; see Fig.4 24 30 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient note 1 400 K/W

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NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2005EB

GRAPHICAL DATA

handbook, halfpage

0.50 VF (V)

(mA)

0.1 0.2 0.3 0.4

103

102

10−1

10−2

MHC456

(1) (3)(2)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

3020100 VR (V)

(μA)

104

103

102

MHC457

(1)

(2)

(3)

Fig.3 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0VR (V)

(pF)

510 20

MHC458

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb = 25 °C.

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NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2005EB

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD523 SC-79 98-11-25

02-12-13

lastic surface mounted package; 2 leads SOD52

0 0.5 1 mm

scale

Ebp

vMA

UNIT bpcDEv

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1) 0.34

0.26 0.17

0.11 0.1

0.85

0.75

1.25

1.15

0.65

0.58 1.65

1.55

2003 Apr 04 6

NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2005EB

DATA SHEET STATUS

Notes

1. Please consult the mos t recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed si nce this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

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not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Apr 04 Document orde r number: 9397 750 11354